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부품번호 | 1MBI3600U4D-170 기능 |
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기능 | IGBT MODULE | ||
제조업체 | Fuji Electric | ||
로고 | |||
전체 6 페이지수
1MBI3600U4D-170
IGBT MODULE (U series)
1700V / 3600A / 1 in one package
IGBT Modules
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
VCES
VGES
Ic
Conditions
Continuous
Collector current
Ic pulse
1ms
-Ic
-Ic pulse
1ms
Collector power dissipation
Pc 1 device
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage Between terminal and copper base (*1) Viso
AC : 1min.
Mounting (*2)
Screw torque
Main Terminals (*2)
Sense Terminals (*2)
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Maximum ratings
1700
±20
4800
3600
9600
7200
3600
7200
18650
150
-40 to +125
3400
5.75
10
2.5
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable value : Mounting : 4.25-5.75 N·m (M6), Main Terminal : 8-10 N·m (M8), Sense Terminal : 1.7-2.5 N·m (M4)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip
Symbols
Conditions
ICES VGE = 0V, VCE = 1700V
IGES VCE = 0V, VGE = ±20V
VGE (th)
VCE = 20V, IC = 3600mA
VCE (sat)
(main terminal) VGE = 15V
VCE (sat)
IC = 3600A
(chip)
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Cies
VGE = 0V, VCE = 10V, f = 1MHz
ton
tr
toff
VCC = 900V, IC = 3600A
VGE = ±15V, Tj = 125°C
Rgon = 1Ω, Rgoff = 0.18Ω
tf
VF
(main terminal) VGE = 0V
VF IF = 3600A
(chip)
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
trr IF = 3600A
R lead
Characteristics
min. typ. max.
- - 1.0
- - 4800
5.5 6.5 7.5
- 2.57 2.77
- 2.97 -
- 2.25 2.40
- 2.65 -
- 336 -
- 1.80 -
- 0.85 -
- 1.30 -
- 0.35 -
- 2.12 2.52
- 2.32 -
- 1.80 2.15
- 2.00 -
- 0.35 -
- 0.089 -
Units
V
V
A
W
°C
°C
VAC
N·m
Units
mA
nA
V
V
nF
µs
V
µs
mΩ
Thermal resistance characteristics
Items
Symbols Conditions
Thermal resistance (1device)
Contact thermal resistance (1device)
Rth(j-c)
Rth(c-f)
IGBT
FWD
with Thermal Compound (*3)
Note *3: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Characteristics
min. typ. max.
- - 0.0067
- - 0.011
- 0.004 -
Units
°C/W
1
1MBI3600U4D-170
IGBT Modules
Forward current vs. Forward on voltage (typ.)
8000
chip
Tj=25°C Tj=125°C
7000
6000
5000
4000
3000
2000
1000
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Forward on voltage : VF [ V ]
0.100
Transient thermal resistance (max.)
0.010
0.001
FWD
IGBT
0.000
0.001
0.010
0.100
Pulse width : Pw [ sec ]
1.000
Reverse recovery characteristics (typ.)
Vcc=900V, VGE=±15V, Rgon=1Ω, Tj=125°C
4800
1.2
4400
4000
Irr 1.1
1.0
3600
0.9
3200
0.8
2800
0.7
2400
0.6
2000
1600
0.5
trr 0.4
1200
0.3
800 0.2
400 0.1
0 0.0
0 1000 2000 3000 4000 5000 6000
Forward current : IF [ A ]
4
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ 1MBI3600U4D-170.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
1MBI3600U4D-170 | IGBT MODULE | Fuji Electric |
1MBI3600U4D-170 | Power Devices (IGBT) | ETC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |