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PDF 7MBR30SA060-50 Data sheet ( Hoja de datos )
| Número de pieza | 7MBR30SA060-50 | |
| Descripción | Power Integrated Module | |
| Fabricantes | Fuji Electric | |
| Logotipo |  |
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SPECIFICATION
Device Name
Type Name
: Power Integrated Module
(RoHS compliant product)
: 7MBR30SA060-50
Spec. No. : MS6M 0868
Apr. 26 ‘05 K.Muramatsu
Apr. 26 ‘05 S.Ogawa
K.Yamada
T.Hosen
MS6M0868
a
1
16
H04-004-07b
1 page  
4. Electrical characteristics ( at Tj= 25℃ unless otherwise specified)
Characteristics
Items
Symbols
Conditions
min. typ. Max. Units
Zero gate voltage
Collector current
ICES VGE = 0 V, VCE = 600 V
-
- 1.0 mA
Gate-Emitter leakage current
IGES VCE = 0 V, VGE = ±20 V
-
- 200 nA
Gate-Emitter
threshold voltage
VGE(th) VCE = 20 V, Ic = 30 mA 5.5 7.8 8.5 V
Collector-Emitter
VCE(sat) VGE = 15 V, chip
- 1.8 - V
saturation voltage
Ic = 30 A terminal
- 1.95 2.4
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Cies
ton
tr
tr(i)
toff
tf
VF
VGE =
f=
Vcc=
Ic =
VGE =
RG =
0 V, VCE =
1 MHz
300 V
30 A
±15 V
82 Ω
10 V
IF = 30 A chip
terminal
- 3000 - pF
- 0.45 1.2
- 0.25 0.6
- 0.08 - μs
- 0.40 1.0
- 0.05 0.35
- 1.8 - V
- 1.95 2.6
Reverse recovery time
Zero gate voltage
Collector current
Gate-Emitter leakage current
Collector-Emitter
saturation voltage
Turn-on time
Turn-off time
Reverse current
Forward on voltage
Reverse current
Resistance
trr IF =
30 A
ICES VGE = 0 V, VCE = 600 V
IGES VCE =
VCE(sat) VGE =
Ic =
0 V, VGE = ±20 V
15 V, chip
20 A terminal
ton Vcc= 300 V
tr Ic =
20 A
toff VGE = ±15 V
tf RG = 120 Ω
IRRM VR = 600 V
VFM IF =
30 A chip
terminal
IRRM VR = 800 V
R T = 25℃
T =100℃
- - 300 ns
- - 1.0 mA
- - 200 nA
- 1.8 - V
- 1.95 2.4
- 0.45 1.2
- 0.25 0.6 μs
- 0.40 1.0
- 0.05 0.35
- - 1.0 mA
- 1.1 - V
- 1.2 1.5
- - 1.0 mA
- 5000 -
Ω
465 495 520
B value
B T = 25/50℃
3305 3375 3450 K
5. Thermal resistance characteristics
Items
Symbols
Conditions
Characteristics
min. typ. Max. Units
Inverter IGBT
- - 1.04
Thermal resistance
Inverter FWD
- - 2.00
(1 device)
Rth(j-c) Brake IGBT
- - 1.56 ℃/Ｗ
Converter Diode
- - 1.33
Contact Thermal resistance
Rth(c-f) with Thermal Compound (※)
- 0.05 - ℃/Ｗ
※ This is the value which is defined mounting on the additional cooling fin with thermal compound.
MS6M0868
a
5
16
H04-004-03a
5 Page 
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 25℃ (typ.)
70
VGE= 20V 15V
12V
60
50
40
30
20
10V
10
0
012345
Collector - Emitter voltage : VCE [ V ]
[ Inverter ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
70
Tj= 25℃ Tj= 125℃
60
50
40
30
20
10
0
0 123 4
Collector - Emitter voltage : VCE [ V ]
[ Inverter ]
Capacitance vs. Collector-Emitter voltage
VGE=0V, f= 1MHz, Tj= 25℃
10000
(typ.)
1000
Cies
100
0
Coes
Cres
5 10 15 20 25 30
Collector - Emitter voltage : VCE [ V ]
35
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 125℃ (typ.)
70
VGE= 20V 15V
12V
60
50
40
30
20 10V
10
0
012345
Collector - Emitter voltage : VCE [ V ]
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25℃ (typ.)
10
8
6
4
2
0
5
500
Ic= 60A
Ic= 30A
Ic= 15A
10 15 20
Gate - Emitter voltage : VGE [ V ]
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=300V, Ic=30A, Tj= 25℃
25
25
400 20
300 15
200 10
100 5
00
0 50 100 150 200
Gate charge : Qg [ nC ]
MS6M0868
11 a
16
H04-004-03a
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet 7MBR30SA060-50.PDF ] | |
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