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6MBI75S-060 데이터시트 PDF




Fuji Electric에서 제조한 전자 부품 6MBI75S-060은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 6MBI75S-060 기능
기능 IGBT Module
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6MBI75S-060 데이터시트, 핀배열, 회로
SPECIFICATION
Device Name :
Type Name :
Spec. No. :
IGBT Module
6MBI75S-060
MS5F 5326
Jan. 27 03 Y.Kobayashi
Jan. 27 03 T.Miyasaka T.Fujihira
K.Yamada
Fuji Electric Co.,Ltd.
Matsumoto Factory
MS5F5326
1
13
H04-004-07




6MBI75S-060 pdf, 반도체, 판매, 대치품
3. Absolute Maximum Ratings ( at Tc= 25C unless otherwise specified
Items
Symbols
Conditions
Collector-Emitter voltage
VCES
Gate-Emitter voltage
VGES
Collector current
Ic
Ic pulse
-Ic
Continuous
1ms
-Ic pulse
1ms
Collector Power Dissipation
Pc 1 device
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage(*1)
Mounting Screw Torque (*2)
Viso
AC : 1min.
(*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value : 2.5~3.5 Nm (M5)
Maximum
Ratings
600
+-20
75
150
75
150
300
150
-40~ +125
2500
3.5
Units
V
V
A
W
C
C
V
Nm
4. Electrical characteristics ( at Tj= 25C unless otherwise specified)
Items
Zero gate voltage
Collector current
Gate-Emitter leakage current
Gate-Emitter
threshold voltage
Collector-Emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Symbols
ICES VGE =
IGES VCE =
VGE(th) VCE =
VCE(sat) VGE =
Ic =
Cies
Coes
Cres
VGE =
VCE =
f=
ton Vcc =
tr Ic =
tr(i) VGE =
toff RG =
tf
VF IF =
trr IF =
Conditions
0 V, VCE =
0 V, VGE =
20 V, Ic =
15 V
75 A
0V
10 V
1 MHz
300 V
75 A
+-15 V
33 ohm
Tj =
Tj =
75 A
75 A
Tj =
Tj =
600 V
+-20 V
75 mA
25 C
125 C
25 C
125 C
Characteristics
min. typ. Max.
- - 1.0
- - 200
5.5 7.8 8.5
2.10 2.55
2.3
7500
- 1200 -
- 825 -
0.45 1.2
0.25 0.6
0.08 -
0.40 1.0
0.05 0.35
2.00 2.7
1.9
- - 0.3
Units
mA
nA
V
V
pF
us
V
us
5. Thermal resistance characteristics
Items
Symbols
Conditions
Characteristics
min. typ. Max.
Thermal resistance
Rth(j-c) IGBT
--
(1 device)
FW D
--
Contact Thermal resistance
Rth(c-f) with Thermal Compound (*)
0.05
* This is the value which is defined mounting on the additional cooling fin with thermal compound.
0.42
0.90
Units
C/W
MS5F5326
4
13
H04-004-03

4페이지










6MBI75S-060 전자부품, 판매, 대치품
Reliability Test Items
Test
cate-
gories
Test items
Test methods and conditions
1 High temperature
Reverse Bias
Test temp.
Bias Voltage
Bias Method
2 High temperature
Reverse Bias
Test duration
Test temp.
Bias Voltage
Bias Method
3 Intermitted
Operating Life
(Power cycle)
( for IGBT )
Test duration
ON time
OFF time
Test temp.
Number of cycles
+0
: Ta = 125 -5
(Tj 150 )
: VC = 0.8×VCES
: Applied DC voltage to C-E
VGE = 0V
: 1000hr.
+0
: Ta = 125 -5
(Tj 150 )
: VC = VGE = +20V or -20V
: Applied DC voltage to G-E
VCE = 0V
: 1000hr.
: 2 sec.
: 18 sec.
: Tj=100±5 deg
Tj 150 , Ta=25±5
: 15000 cycles
Reference
norms
EIAJ
ED-4701
Number
of sample
Accept-
ance
number
D - 313
5 (1:0)
D - 323
5 (1:0)
D - 322
5 (1:0)
Failure Criteria
Item
Characteristic
Symbol
Failure criteria
Unit
Lower limit Upper limit
Note
Electrical
Leakage current
characteristic
ICES
±IGES
-
-
USL×2 mA
USL×2 A
Gate threshold voltage VGE(th) LSL×0.8 USL×1.2 mA
Saturation voltage
VCE(sat)
-
USL×1.2 V
Forward voltage
Thermal IGBT
resistance
VF
VGE
or VCE
-
-
USL×1.2 V
USL×1.2 mV
FWD
VF - USL×1.2 mV
Isolation voltage
Viso Broken insulation -
Visual
Visual inspection
inspection
Peeling
-
The visual sample
-
Plating
and the others
LSL : Lower specified limit.
USL : Upper specified limit.
Note : Each parameter measurement read-outs shall be made after stabilizing the components
at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests.
And in case of the wetting tests, for example, moisture resistance tests, each component
shall be made wipe or dry completely before the measurement.
MS5F5326
7
13
H04-004-03

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부품번호상세설명 및 기능제조사
6MBI75S-060

IGBT Module

Fuji Electric
Fuji Electric

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