|
|
|
부품번호 | 7MBR10SC120 기능 |
|
|
기능 | IGBT Module | ||
제조업체 | Fuji Electric | ||
로고 | |||
전체 7 페이지수
7MBR10SC120
IGBT Modules
PIM/Built-in converter with thyristor
and brake (S series)
1200V / 10A / PIM
Features
· Low VCE(sat)
· Compact Package
· P.C. Board Mount Module
· Converter Diode Bridge Dynamic Brake Circuit
Applications
· Inverter for Motor Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Symbol
VCES
VGES
IC
ICP
Collector power disspation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
-IC
PC
VCES
VGES
IC
ICP
Collector power disspation
Repetitive peak reverse voltage(Diode)
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Average on-state current
Surge 0n-state current (Non-Repetitive)
Junction temperature
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I2t (Non-Repetitive)
Junction temperature (except Thyristor)
Storage temperature
Isolation between terminal and copper base *2
voltage between thermistor and others *3
Mounting screw torque
PC
VRRM
VDRM
VRRM
IT(AV)
ITSM
Tjw
VRRM
IO
IFSM
I2t
Tj
Tstg
Viso
Condition
Continuous
1ms
1 device
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Continuous
1ms
1 device
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
50Hz/60Hz sine wave
Tj=125°C, 10ms half sine wave
50Hz/60Hz sine wave
Tj=150°C, 10ms
half sine wave
AC : 1 minute
Rating
1200
±20
15
10
30
20
10
75
1200
±20
15
10
30
20
75
1200
1600
1600
10
145
125
1600
10
105
55
+150
-40 to +125
AC 2500
AC 2500
1.7 *1
*1 Recommendable value : 1.3 to 1.7 N·m (M4)
*2 All terminals should be connected together when isolation test will be done.
*3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 26
should be connected together and shorted to copper base.
Unit
V
V
A
A
A
W
V
V
A
A
W
V
V
V
A
A
°C
V
A
A
A2s
°C
°C
V
V
N·m
IGBT Module
7MBR10SC120
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=120Ω, Tj= 25°C
1000
toff
500
ton
tr
100
tf
50
0
5000
1000
500
5 10 15
Collector current : Ic [ A ]
[ Inverter ]
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=10A, VGE=±15V, Tj= 25°C
20
ton
toff
tr
100
50
50
8
tf
100 500 1000
Gate resistance : Rg [ Ω ]
[ Inverter ]
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=10A, VGE=±15V, Tj= 125°C
2000
Eon
6
4
2
Eoff
0
50 100
Err
500
1000
2000
Gate resistance : Rg [ Ω ]
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=120Ω, Tj= 125°C
1000
toff
500
ton
tr
tf
100
50
0
5 10 15 20
Collector current : Ic [ A ]
[ Inverter ]
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=120Ω
3
Eon(125°C)
2
Eon(25°C)
Eoff(125°C)
1
Eoff(25°C)
Err(125°C)
Err(25°C)
0
0 5 10 15 20
Collector current : Ic [ A ]
[ Inverter ]
Reverse bias safe operating area
+VGE=15V, -VGE<=15V, Rg>=120Ω, Tj<=125°C
120
100
80
SCSOA
(non-repetitive pulse)
60
40
20
0
0
RBSOA
(Repetitive pulse)
200 400 600 800 1000 1200
Collector - Emitter voltage : VCE [ V ]
1400
4페이지 IGBT Module
Outline Drawings, mm
7MBR10SC120
Marking : White
Marking : White
Equivalent Circuit Schematic
[ Converter ]
[ Thyristor ]
21
(P) 26
[ Brake ]
22(P1)
1(R)
2(S)
3(T)
25
7(B)
20
(Gu)
19(Eu)
23(N)
14(Gb)
24(N1)
13(Gx)
[ Inverter ]
18
(Gv )
17(Ev )
4(U)
12(Gy )
16
(Gw)
15(Ew)
5(V)
11(Gz)
[ Thermistor ]
89
6(W)
10(En)
7페이지 | |||
구 성 | 총 7 페이지수 | ||
다운로드 | [ 7MBR10SC120.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
7MBR10SC120 | IGBT Module | Fuji Electric |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |