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KF16N25D PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 KF16N25D
기능 N CHANNEL MOS FIELD EFFECT TRANSISTOR
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KF16N25D 데이터시트, 핀배열, 회로
SEMICONDUCTOR
TECHNICAL DATA
KF16N25D
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for DC/DC Converters
and switching mode power supplies.
FEATURES
VDSS= 250V, ID= 13A
Drain-Source ON Resistance : RDS(ON)=0.24
Qg(typ) = 21nC
@VGS = 10V
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
250
30
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
ID
IDP
EAS
EAR
dv/dt
PD
13
8.1
39*
200
4.7
4.5
85
0.68
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Tj
Tstg
150
-55 150
Thermal Resistance, Junction-to-Case RthJC
1.47
Thermal Resistance, Junction-to-
Ambient
RthJA
110
* : Drain Current limited by maximum junction temperature.
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
A
CD
B
H
G
FF
J
E
123
O
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_ 0.20
E 2.70 +_ 0.15
F 2.30 +_ 0.10
G 0.96 MAX
H 0.90 MAX
J 1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N 0.70 MIN
O 0.1 MAX
1. GATE
2. DRAIN
3. SOURCE
DPAK (1)
PIN CONNECTION
D
G
S
2014. 12. 01
Revision No : 2
1/6




KF16N25D pdf, 반도체, 판매, 대치품
KF16N25D
104
103
102
101
100
0
Fig 7. C - VDS
Ciss
Coss
Crss
10 20 30
Drain - Source Voltage VDS (V)
40
Fig9. Safe Operation Area
102
10µs
101
100µs
100 Operation in this
area is limited by RDS(ON)
Tc= 25 C
Tj = 150 C
Single pulse
10-1
100
101
102
1ms
10ms
DC
Drain - Source Voltage VDS (V)
103
12
ID=16A
10
Fig8. Qg- VGS
8
6 VDS = 200V
4
2
0
0 4 8 12 16 20 24
Gate - Charge Qg (nC)
Fig10. ID - Tj
15
12
9
6
3
0
0 25 50 75 100 125 150
Junction Temperature Tj ( C)
Fig11. Transient Thermal Response Curve
101
2014. 12. 01
100 Duty=0.5
0.2
0.1
0.05
10-1
0.02
0.01
Single
Pulse
10-2
10-5
10-4
10-3 10-2
TIME (sec)
PDM
t1
t2
- Duty Factor, D= t1/t2
- RthJC = 1.47 C/W Max
10-1 100 101
Revision No : 2
4/6

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