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PDF 2N5551S Data sheet ( Hoja de datos )
| Número de pieza | 2N5551S | |
| Descripción | EPITAXIAL PLANAR NPN TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
HIGH VOLTAGE APPLICATION.
FEATURES
High Collector Breakdwon Voltage
: VCBO=180V, VCEO=160V
Low Leakage Current.
: ICBO=50nA(Max.) VCB=120V
Low Saturation Voltage
: VCE(sat)=0.2V(Max.) IC=50mA, IB=5mA
Low Noise : NF=8dB (Max.)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
VCBO
180
Collector-Emitter Voltage
VCEO
160
Emitter-Base Voltage
VEBO
6
Collector Current
IC 600
Base Current
IB 100
Collector Power Dissipation
PC * 350
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
Note : * Package Mounted On 99.5% Alumina 10 8 0.6 )
UNIT
V
V
V
mA
mA
mW
2N5551S
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
DIM MILLIMETERS
A 2.93+_ 0.20
B 1.30+0.20/-0.15
23
C 1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1 G 1.90
H 0.95
J 0.13+0.10/-0.05
Q K 0.00 ~ 0.10
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
P7
Q 0.1 MAX
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
Marking
ZFType Name
Lot No.
2016. 03. 28
Revision No : 3
1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N5551S.PDF ] | |
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