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PDF KTB1366 Data sheet ( Hoja de datos )
| Número de pieza | KTB1366 | |
| Descripción | TRIPLE DIFFUSED PNP TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
KTB1366
TRIPLE DIFFUSED PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES
Low Collector Saturation Voltage
: VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A.
Collector Power Dissipation
: PC=25W (Tc=25 )
Complementary to KTD2058.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
VCBO
VCEO
VEBO
IC
IB
Collector Power
Dissipation
Ta=25
Tc=25
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
-60
-60
-7
-3
-0.5
2
25
150
-55 150
UNIT
V
V
V
A
A
W
A
S
E
LL
M
DD
NN
C
DIM MILLIMETERS
A 10.0+_ 0.3
B 15.0+_ 0.3
C 2.70 +_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_ 0.2
F 3.0+_ 0.3
G 12.0+_ 0.3
H 0.5+0.1/-0.05
J 13.6 +_ 0.5
R K 3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_ 0.1
P 6.8+_ 0.1
Q 4.5 +_ 0.2
R 2.6 +_0.2
HS
0.5 Typ
123
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
ICBO
IEBO
V(BR)CEO
DC Current Gain
hFE(1) (Note)
hFE(2)
Collector Emitter Saturation Voltage
VCE(sat)
Base-Emitter Voltage
VBE
Transition Frequency
fT
Collector Output Capacitance
Cob
Turn-on Time
ton
Switching
Time
Storage Time
tstg
Fall Time
tf
Note : hFE(1) Classification O:60 120, Y:100 200
TEST CONDITION
VCB=-60V, IE=0
VEB=-7V, IC=0
IC=-50mA, IB=0
VCE=-5V, IC=-0.5A
VCE=-5V, IC=-3A
IC=-2A, IB=-0.2A
VCE=-5V, IC=-0.5A
VCE=-5V, IC=-0.5A
VCB=-10V, IE=0, f=1MHz
0 IB2
INPUT
IB1
20µsec
-IB1=IB2=0.2A
DUTY CYCLE <= 1%
IB1
IB2
OUTPUT
15Ω
VCC =-30V
MIN.
-
-
-60
60
20
-
-
-
-
TYP.
-
-
-
-
-
-0.25
-0.7
9
150
MAX. UNIT
-100 A
-100 A
-V
200
-
-1.0 V
-1.0 V
- MHz
- pF
- 0.4 -
- 1.7 -
S
- 0.5 -
2007. 5. 21
Revision No : 4
1/2
1 page | ||
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| PDF Descargar | [ Datasheet KTB1366.PDF ] | |
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