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MJE13005DC PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 MJE13005DC
기능 TRIPLE DIFFUSED NPN TRANSISTOR
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MJE13005DC 데이터시트, 핀배열, 회로
SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE HIGH SPEED POWER SWITCH
APPLICATION.
Built-in Free wheeling Diode makes efficient anti saturation operation.
Suitable for half bridge light ballast Applications.
Low base drive requirement.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation (Tc=25 )
Junction Temperature
Storage Temperature Range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
700
400
10
5
10
2
75
150
-55 150
V
V
V
A
A
W
MJE13005DC
TRIPLE DIFFUSED NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Emitter Cut-off Current
DC Current Gain
IEBO
hFE(1)
hFE(2)
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter Saturation Voltage
Collector Output Capacitance
Transition Frequency
Turn-On Time
VBE(sat)
Cob
fT
ton
TEST CONDITION
VEB=9V, IC=0
VCE=5V, IC=1A
VCE=5V, IC=2A
IC=1A, IB=0.2A
IC=2A, IB=0.5A
IC=4A, IB=1A
IC=1A, IB=0.2A
IC=2A, IB=0.5A
VCB=10V, f=1MHz
VCE=10V, IC=0.5A
Storage Time
tstg
Fall Time
Diode Forward Voltage
tf
VF
*Reverse recovery tims (di/dt=10A/ S)
trr
*Pulse Test : Pulse Width = 5mS, Duty cycles 10%
IF=2A
IF=0.4A
IF=1A
IF=2A
2015. 6. 09
Revision No : 1
MIN.
-
23
8
-
-
-
-
-
-
4
TYP.
-
-
-
-
-
-
-
-
65
-
MAX.
10
35
-
0.5
0.6
1
1.2
1.6
-
-
UNIT
A
V
V
pF
MHz
-
- 0.15
S
2-5
S
- - 0.8 S
- - 1.6 V
- 800 -
nS
- 1.4 -
S
- 1.9 -
S
1/4




MJE13005DC pdf, 반도체, 판매, 대치품
MJE13005DC
REVERSE BIASED SAFE OPERATING AREA TEST CIRCUITS
For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter
junction reverse biased.
Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current.
This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc.
The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current conditions during reverse
biased turn-off.
This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.
Figure 11 gives the complete RBSOA characteristics.
2015. 6. 09
Revision No : 1
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