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Datasheet 2N5401 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2N5401 | PNP SILICON PLANAR EPITAXIAL TRANSISTOR Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR
2N5401 TO-92 CBE
EBC
High Voltage PNP Transistor For General Purpose And Telephony Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise sp |  CDIL | transistor |
| 2 | 2N5401 | PNP Silicon Amplifier Transistor MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
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)HDWXUHV
• Through Hole Package • 150oC Junction Temperature • Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See or |  MCC | transistor |
| 3 | 2N5401 | PNP Transistors PNP Transistors
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current
Total Device Dissipation TA=25 C
Junction Temperature
Storage, Temperature
Symbol VCEO VCBO VEBO
IC PD
Tj
Tstg
2N5401
TO-92
1. EMITTER 2. BASE 3. CO |  WEITRON | transistor |
| 4 | 2N5401 | PNP Plastic Encapsulated Transistor Elektronische Bauelemente
2N5401
-0.6 A, -160 V PNP Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
Switching and amplification in high voltage Applications such as telephony Low current (max. 600mA) High voltage (max. 160V)
Colle |  SeCoS | transistor |
| 5 | 2N5401 | AMPLIFIER TRANSISTOR MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N5400/D
Amplifier Transistors
PNP Silicon
COLLECTOR 3
2 BASE
1 EMITTER
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipatio |  Motorola Semiconductors | transistor |
2N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2N5000 | NPN Silicon Power Transistor Texas transistor | | |
| 2 | 2N5000 | Trans GP BJT NPN 80V 2A 3-Pin TO-59 New Jersey Semiconductor data | | |
| 3 | 2N5001 | PNP Transistor 2 AMP PNP
Sorted by IC, then VCEO
Part Number
mIaCx (A)
mVCaExO (V)
Ratings based on 25˚C case temperature unless otherwise specified
mhFiEn
mhaFEx
@Ic (A)
VmCEa(sxat) (V)
@(A)IC
mfTin (MHz)
mPaTx
*TC=100°C
(W)
Package
2N3205
2
40
20
60 Note 1 0.4
Note 1
Note 1
40
TO-59
2N32  SSDI transistor | | |
| 4 | 2N5001 | Trans GP BJT PNP 80V 2A 3-Pin TO-59 New Jersey Semiconductor data | | |
| 5 | 2N5002 | HIGH SPEED NPN TRANSISTOR SSDI transistor | | |
| 6 | 2N5002 | Type 2N5002 Geometry 9202 Polarity NPN Data Sheet No. 2N5002
Type 2N5002
Geometry 9202 Polarity NPN Qual Level: JAN - JANTXV
Features: • • • • Silicon power transistor for use in high speed power switching applications. Housed in a TO-59 case. Also available in chip form using the 9202 chip geometry. The Min and Max limits shown  Semicoa Semiconductor data | | |
| 7 | 2N5002 | (2N5002 / 2N5004) NPN POWER SILICON TRANSISTOR TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/534 Devices 2N5002 2N5004 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
Symbol
VCEO VCBO VEBO IC IC(3) PT T  Microsemi Corporation transistor | |
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