|
|
Datasheet BZX55C Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | BZX55C | Silicon Zener Diode, Rectifier BZX55C
SILICON PLANAR ZENER DIODES
The Zener voltages are graded according to the international E24 standard. Other tolerances and higher Zener voltages are upon request.
Max. 0.5
Max. 1.9
Min. 27.5
Black Cathode Band
Black Part No. Black "ST" Brand
XXX
ST
Max. 3.9
Min. 27.5
Max. 0.45
Max. | SEMTECH | diode |
2 | BZX55C | Silicon Epitaxial Planar Z-Diodes BZX55C...
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
D D D D D
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
94 9367
Absolute Maximum Ratings
Tj = 25_C Parameter P | Vishay Telefunken | diode |
3 | BZX55C | VOLTAGE REGULATOR DIODE IN A CERAMIC SURFACE MOUNT PACKAGE FOR HI.REL APPLICATIONS BZX55C Series
MECHANICAL DATA Dimensions in mm(inches)
0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012)
3
2
1
1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) A=
0.76 ± 0.15 (0.03 ± 0.006)
VOLTAGE REGULATOR DIODE IN A CERAMIC SURFACE MOUNT PACKAGE FOR HI–REL APPLICATIONS
A 1.40 (0 | Seme LAB | diode |
4 | BZX55C | Series Half Watt Zeners BZX55C 3V3 - BZX55C 33 Series
Discrete POWER & Signal Technologies
BZX55C 3V3 - 33 Series Half Watt Zeners
Absolute Maximum Ratings*
Parameter
Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature (1/16” from case for 10 seconds) Total Device Dissipation Derate above | Fairchild Semiconductor | data |
5 | BZX55C | Zener diode | Formosa MS | diode |
BZX Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BZX10 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
2 | BZX10 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
3 | BZX11 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
4 | BZX11 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
5 | BZX12 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
6 | BZX12 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
7 | BZX13 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | |
Esta página es del resultado de búsqueda del BZX55C. Si pulsa el resultado de búsqueda de BZX55C se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |