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Datasheet BZX85B Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BZX85B | SILICON PLANAR POWER ZENER DIODES BZX85B
SILICON PLANAR POWER ZENER DIODES
for use in stabilizing and clipping circuits with high power rating.
Max. 0.7
Max. 2.8
Min. 25.4
Black Cathode Band
Black Part No. Black "ST" Brand
XXX
ST
Max. 4.2
Min. 25.4
Glass Case DO-41 Dimensions in mm
Absolute Maximum Ratings (Ta = 25 OC) Para |  SEMTECH | diode |
| 2 | BZX85B | Silicon Epitaxial Planar Z-Diodes BZX85B...
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
D D D D
Sharp edge in reverse characteristics Low reverse current Low noise Very high stability
Applications
94 9369
Voltage stabilization
Absolute Maximum Ratings
Tj = 25_C Parameter Power dissipation Junction temperature |  Vishay Telefunken | diode |
| 3 | BZX85B10 | Zener Diode, Rectifier BZX85B Series
VZ : 3.6 to 200V PD : 1.3W
FEATURES :
• Silicon planar power zener diodes. • For use in stabilizing and clipping circuits with high
power rating. • Standard zener voltage tolerance is ± 2% • Other tolerances are available upon request. • Pb / RoHS Free
MECHANICAL DATA :
Case |  EIC | diode |
| 4 | BZX85B10 | SILICON PLANAR POWER ZENER DIODES BZX85B
SILICON PLANAR POWER ZENER DIODES
for use in stabilizing and clipping circuits with high power rating.
Max. 0.7
Max. 2.8
Min. 25.4
Black Cathode Band
Black Part No. Black "ST" Brand
XXX
ST
Max. 4.2
Min. 25.4
Glass Case DO-41 Dimensions in mm
Absolute Maximum Ratings (Ta = 25 OC) Para | SEMTECH | diode |
| 5 | BZX85B10 | Silicon Epitaxial Planar Z-Diodes BZX85B...
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
D D D D
Sharp edge in reverse characteristics Low reverse current Low noise Very high stability
Applications
94 9369
Voltage stabilization
Absolute Maximum Ratings
Tj = 25_C Parameter Power dissipation Junction temperature | Vishay Telefunken | diode |
BZX Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BZX10 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju  COS diode | | |
| 2 | BZX10 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
| 3 | BZX11 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
| 4 | BZX11 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
| 5 | BZX12 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
| 6 | BZX12 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
| 7 | BZX13 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | |
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