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CNY17G-1 데이터시트 PDF




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부품번호 CNY17G-1 기능
기능 Optocoupler with Phototransistor Output
제조업체 Vishay Telefunken
로고 Vishay Telefunken 로고


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CNY17G-1 데이터시트, 핀배열, 회로
CNY17 Series
Vishay Telefunken
Optocoupler with Phototransistor Output
Description
The CNY17 series consists of a phototransistor opti-
cally coupled to a gallium arsenide infrared-emitting
diode in a 6-lead plastic dual inline package.
The elements are mounted on one leadframe using
a coplanar technique, providing a fixed distance
between input and output for highest safety
requirements.
Applications
Circuits for safe protective separation against
electrical shock according to safety class II
(reinforced isolation):
D For appl. class I – IV at mains voltage 300 V
D For appl. class I – III at mains voltage 600 V
according to VDE 0884, table 2, suitable for:
Switch-mode power supplies, line receiver,
computer peripheral interface, microproces-
sor system interface.
VDE Standards
These couplers perform safety functions according
to the following equipment standards:
D VDE 0884
Optocoupler for electrical safety requirements
D IEC 950/EN 60950
Office machines (applied for reinforced isolation
for mains voltage 400 VRMS)
D VDE 0804
Telecommunication apparatus and data
processing
D IEC 65 Safety for mains-operated electronic and
related household apparatus
Order Instruction
Ordering Code
CTR Ranking
CNY17–1/ CNY17G–11)
40 to 80%
CNY17–2/ CNY17G–21)
63 to 125%
CNY17–3/ CNY17G–31)
100 to 200%
CNY17–4/ CNY17G–41)
160 to 320%
1) G = Leadform 10.16 mm; G is not market on the body
14827
BCE
6 54
123
A (+) C (–) n.c.
Remarks
108 Rev. A3, 11–Jan–99




CNY17G-1 pdf, 반도체, 판매, 대치품
CNY17 Series
Vishay Telefunken
Maximum Safety Ratings (according to VDE 0884) see figure 1
This device is used for protective separation against electrical shock only within the maximum safety ratings.
This must be ensured by using protective circuits in the applications.
Input (Emitter)
Parameters
Forward current
Output (Detector)
Test Conditions
Symbol
Isi
Value
130
Unit
mA
Parameters
Power dissipation
Coupler
Test Conditions
Tamb 25°C
Symbol
Psi
Value
265
Unit
mW
Parameters
Rated impulse voltage
Safety temperature
Test Conditions
Symbol
VIOTM
Tsi
Value
6
150
Unit
kV
°C
Insulation Rated Parameters (according to VDE 0884)
Parameter
Test Conditions
Symbol
Partial discharge test voltage – 100%, ttest = 1 s
Routine test
Vpd
Partial discharge test voltage – tTr = 60 s, ttest = 10 s,
Lot test (sample test)
(see figure 2)
Insulation resistance
VIO = 500 V
VIO = 500 V,
Tamb = 100°C
VIO = 500 V,
Tamb = 150°C
VIOTM
Vpd
RIO
RIO
RIO
(construction test only)
VIOTM
300
V
250 Phototransistor
Psi ( mW )
200
VPd
150 VIOWM
VIORM
100
Min. Typ. Max.
1.6
6
1.3
1012
1011
109
t1, t2 = 1 to 10 s
t3, t4 = 1 s
ttest = 10 s
tstres= 12 s
Unit
kV
kV
kV
W
W
W
50
0
0
94 9182
IR-Diode
Isi ( mA )
25 50 75 100 125 150
Tsi – Safety Temperature ( °C )
Figure 1. Derating diagram
0
13930
t1
tTr = 60 s
t3 ttest t4
t2 tstres
t
Figure 2. Test pulse diagram for sample test according to
DIN VDE 0884
Rev. A3, 11–Jan–99
111

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CNY17G-1 전자부품, 판매, 대치품
CNY17 Series
Vishay Telefunken
100
IF=50mA
20mA
10mA
10 5mA
2mA
1
1mA
1000
VCE=5V
100
10
0.1
0.1
1
10 100
95 11054
VCE – Collector Emitter Voltage ( V )
Figure 12. Collector Current vs. Collector Emitter Voltage
1
0.1 1
10 100
95 11057
IF – Forward Current ( mA )
Figure 15. Current Transfer Ratio vs. Forward Current
1.0 50
toff
0.8 40
0.6
0.4
CTR=50%
0.2
20%
0 10%
1 10 100
95 11055
IC – Collector Current ( mA )
Figure 13. Collector Emitter Saturation Voltage vs.
Collector Current
1000
800
VCE=5V
600
400
200
0
0.01 0.1 1 10 100
95 11056
IC – Collector Current ( mA )
Figure 14. DC Current Gain vs. Collector Current
30
ton
20
Saturated Operation
W10 VS=5V
RL=1k
0
0 5 10 15 20
95 11017
IF – Forward Current ( mA )
Figure 16. Turn on / off Time vs. Forward Current
20
ton
15
10 toff
Non Saturated
Operation
WVS=5V
RL=100
5
0
02
46
8 10
95 11016
IC – Collector Current ( mA )
Figure 17. Turn on / off Time vs. Collector Current
114 Rev. A3, 11–Jan–99

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