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부품번호 | MTA025B01V8 기능 |
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기능 | Dual P-Channel Enhancement Mode MOSFET | ||
제조업체 | Cystech Electonics | ||
로고 | |||
CYStech Electronics Corp.
Spec. No. : C089V8
Issued Date : 2016.03.18
Revised Date :
Page No. : 1/9
Dual P-Channel Enhancement Mode MOSFET
MTA025B01V8
BVDSS
ID@VGS=-4.5V, TA=25°C
ID@VGS=-4.5V, TC=25°C
VGS=-4.5V, ID=-4.5A
RDSON(TYP) VGS=-2.5V, ID=-2.2A
VGS=-1.8V, ID=-2.2A
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
P-CH
-14V
-5.0A
-7.1A
22.8mΩ
30.7mΩ
49.0mΩ
Equivalent Circuit
MTA025B01V8
Outline
DFN3×3
G:Gate S:Source D:Drain
Pin 1
Ordering Information
Device
MTA025B01V8-0-T6-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTA025B01V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C089V8
Issued Date : 2016.03.18
Revised Date :
Page No. : 4/9
Typical Characteristics :
40
35
30
25
20
15
10
5
0
0
Typical Output Characteristics
10V,9V,8V,7V,6V,5V,4V
3V
2.5V
2V
-VGS=1.5V
1 23 4
-VDS, Drain-Source Voltage(V)
5
1000
Static Drain-Source On-State resistance vs Drain Current
VGS=-1.5V
VGS=-1.8V VGS=-2.5V
100
VGS=-4.5V
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6 ID=-250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
0.8
0.6 Tj=150°C
0.4
10
0.01
0.1 1 10
-ID, Drain Current(A)
100
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
180
ID=-4.5A
160
140
120
100
80
60
40
20
0
012345678
-VGS, Gate-Source Voltage(V)
0.2
0
24 68
-IDR, Reverse Drain Current (A)
10
Drain-Source On-State Resistance vs Junction Tempearture
2
1.8 VGS=-2.5V, ID=-2.2A
1.6 RDSON@Tj=25°C : 30.7mΩ typ.
1.4
1.2
1
0.8
VGS=-4.5V, ID=-4.5A
0.6 RDSON @Tj=25°C: 22.8mΩ typ.
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTA025B01V8
CYStek Product Specification
4페이지 Reel Dimension
CYStech Electronics Corp.
Spec. No. : C089V8
Issued Date : 2016.03.18
Revised Date :
Page No. : 7/9
Carrier Tape Dimension
MTA025B01V8
CYStek Product Specification
7페이지 | |||
구 성 | 총 9 페이지수 | ||
다운로드 | [ MTA025B01V8.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
MTA025B01V8 | Dual P-Channel Enhancement Mode MOSFET | Cystech Electonics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |