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PDF MTB2D0N04E3 Data sheet ( Hoja de datos )
| Número de pieza | MTB2D0N04E3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTB2D0N04E3 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB2D0N04E3
Spec. No. : C072E3
Issued Date : 2015.12.25
Revised Date : 2016.03.04
Page No. : 1/ 8
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=20A
RDS(ON)@VGS=4.5V, ID=20A
40V
84A
17.3A
2.2 mΩ(typ)
2.5 mΩ(typ)
Symbol
MTB2D0N04E3
Outline
TO-220
G：Gate D：Drain S：Source
GDS
Ordering Information
Device
MTB2D0N04E3-0-UB-X
Package
TO-220
(RoHS compliant)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTB2D0N04E3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C072E3
Issued Date : 2015.12.25
Revised Date : 2016.03.04
Page No. : 5/ 8
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
1000
C oss
Threshold Voltage vs Junction Tempearture
1.4
1.2
1 ID=1mA
0.8
0.6
Crss 0.4
ID=250μA
100
0
5 10 15 20 25
VDS, Drain-Source Voltage(V)
30
0.2
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
100 10
10
1
VDS=10V
0.1 Pulsed
Ta=25°C
0.01
0.001
0.01 0.1
1
10
ID, Drain Current(A)
100
1000
100
RDS(ON)
Limited
Maximum Safe Operating Area
10μs
100μs
10
1 TC=25°C, Tj=175°C,
VGS=10V, RθJC=0.9°C/W
Single Pulse
0.1
0.1
1 10
VDS, Drain-Source Voltage(V)
1ms
10ms
100ms
DC
100
8 VDS=20V
6
VDS=32V
4
2
ID=84A
0
0 20 40 60 80 100 120 140 160 180 200
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
180
160 Silicon Limit
140
120
100
80
Package Limit
60
40
20 VGS=10V, RθJC=0.9°C/W
0
25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
MTB2D0N04E3
CYStek Product Specification
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MTB2D0N04E3.PDF ] | |
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