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PDF MTB2D5N03BQ8 Data sheet ( Hoja de datos )
| Número de pieza | MTB2D5N03BQ8 | |
| Descripción | N-Channel Logic Level Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTB2D5N03BQ8 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C998Q8
Issued Date : 2015.12.16
Revised Date :
Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB2D5N03BQ8
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package
BVDSS
ID@ TA=25°C, VGS=10V
ID@ TC=25°C, VGS=10V
RDSON@VGS=10V, ID=19A
RDSON@VGS=4.5V, ID=15A
30V
21A
30A
2.7mΩ(typ)
3.6mΩ(typ)
Symbol
MTB2D5N03BQ8
Outline
Pin 1
SOP-8
G：Gate D：Drain S：Source
Ordering Information
Device
MTB2D5N03BQ8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB2D5N03BQ8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C998Q8
Issued Date : 2015.12.16
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
10000
Threshold Voltage vs Junction Tempearture
1.4
1000
Ciss 1.2
1
C oss 0.8
ID=1mA
100
0
Crss
5 10 15 20 25
VDS, Drain-Source Voltage(V)
30
Forward Transfer Admittance vs Drain Current
100
VDS=10V
10
VDS=15V
1
0.1
0.01
0.001
1000
Pulsed
Ta=25°C
0.01 0.1
1
10
ID, Drain Current(A)
Maximum Safe Operating Area
100
0.6 ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=15V
8 ID=20A
6
4
2
0
0 10 20 30 40 50 60
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
25
100 RDS(ON)
Limit
10
1
TA=25°C, Tj(max)=150°C
0.1 VGS=10V, RθJA=40°C/W
Single Pulse
0.01
0.01
0.1 1
10
VDS, Drain-Source Voltage(V)
100μs
1ms
10ms
100ms
1s
DC
100
20
15
10
5 TA=25°C, VGS=10V, Tj(max)=150°C
RθJA=40°C/W, single pulse
0
25 50 75 100 125 150
Tj, Junction Temperature(°C)
175
MTB2D5N03BQ8
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTB2D5N03BQ8.PDF ] | |
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