Datasheet.kr   

CNY75B 데이터시트 PDF




Vishay Telefunken에서 제조한 전자 부품 CNY75B은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 CNY75B 자료 제공

부품번호 CNY75B 기능
기능 Optocoupler with Phototransistor Output
제조업체 Vishay Telefunken
로고 Vishay Telefunken 로고


CNY75B 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 10 페이지수

미리보기를 사용할 수 없습니다

CNY75B 데이터시트, 핀배열, 회로
CNY75A/ B/ C/ GA/ GB/ GC
Vishay Semiconductors
Optocoupler, Phototransistor Output, With Base Connection
Features
• Isolation materials according to UL94-VO
• Pollution degree 2 (DIN/VDE 0110 / resp. IEC
60664)
• Climatic classification 55/100/21
(IEC 60068 part 1)
• Special construction: Therefore, extra low cou-
pling capacity of typical 0.2 pF, high Common
Mode Rejection
• Low temperature coefficient of CTR
• CTR offered in 3 groups
B CE
6 54
1 23
A (+) C (-) nc
e3
17186
V
DE
Pb
Pb-free
• Rated isolation voltage (RMS includes DC)
VIOWM = 600 VRMS (848 V peak)
• Rated recurring peak voltage (repetitive)
VIORM = 600 VRMS
• Creepage current resistance according to VDE
0303/IEC 60112 Comparative Tracking Index: CTI
275
• Thickness through insulation 0.75 mm
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E76222 System Code A, Double
Protection
• BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN
60950 (BS 7002), Certificate number 7081 and
7402
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
• VDE related features:
• Rated impulse voltage (transient overvoltage)
VIOTM = 6 kV peak
• Isolation test voltage (partial discharge test volt-
age) Vpd = 1.6 kV
• FIMKO (SETI): EN 60950, Certificate No. 12399
Applications
Circuits for safe protective separation against electri-
cal shock according to safety class II (reinforced iso-
lation):
For appl. class I - IV at mains voltage 300 V
For appl. class I - III at mains voltage 600 V accord-
ing to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-
5-5 pending, table 2, suitable for:
Switch-mode power supplies, line receiver, com-
puter peripheral interface, microprocessor sys-
tem interface.
Description
The CNY75A/ B/ C/ GA/ GB/ GC consists of a pho-
totransistor optically coupled to a gallium arsenide
infrared-emitting diode in a 6-pin plastic dual inline
package.
The elements are mounted on one leadframe provid-
ing a fixed distance between input and output for high-
est safety requirements.
VDE Standards
These couplers perform safety functions according to the following
equipment standards:
DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5
pending
Optocoupler for electrical safety requirements
IEC 60950/ EN 60950
Office machines (applied for reinforced isolation for mains voltage
400 VRMS)
VDE 0804
Telecommunication apparatus and data processing
IEC 60065
Safety for mains-operated electronic and related house hold appa-
ratus
Document Number 83536
Rev. 1.7, 26-Oct-04
www.vishay.com
1




CNY75B pdf, 반도체, 판매, 대치품
CNY75A/ B/ C/ GA/ GB/ GC
Vishay Semiconductors
Maximum Safety Ratings
(according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending) see figure 1
This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
Input
Parameter
Forward current
Test condition
Symbol
Min
Typ.
Max
Unit
IF 130 mA
Output
Parameter
Power dissipation
Test condition
Symbol
Min
Typ.
Max
Unit
Pdiss
265 mW
Coupler
Parameter
Rated impulse voltage
Safety temperature
Test condition
Symbol
Min
Typ.
Max
Unit
VIOTM
6 kV
Tsi 150 °C
Insulation Rated Parameters
Parameter
Partial discharge test voltage -
Routine test
Partial discharge test voltage -
Lot test (sample test)
Test condition
100 %, ttest = 1 s
tTr = 60 s, ttest = 10 s,
(see figure 2)
Insulation resistance
VIO = 500 V
VIO = 500 V, Tamb 100 °C
VIO = 500 V, Tamb 150 °C
(construction test only)
275
250
225
200
175
150
125
100
75
50
25
0
0
95 10923
Psi (mW)
Isi (mA)
25 50 75 100 125 150 175
Tamb - Ambient Temperature ( °C )
Figure 1. Derating diagram
Symbol
Vpd
VIOTM
Vpd
RIO
RIO
RIO
VIOTM
VPd
VIOWM
VIORM
Min
1.6
6
1.3
1012
1011
109
Typ.
t1, t2 = 1 to 10 s
t3, t4 = 1 s
ttest = 10 s
tstres = 12 s
Max
Unit
kV
kV
kV
0
13930
t1
tTr = 60 s
t3 ttest t4
t2 tstres
t
Figure 2. Test pulse diagram for sample test according to DIN EN
60747-5-2(VDE0884)/ DIN EN 60747-; IEC60747
www.vishay.com
4
Document Number 83536
Rev. 1.7, 26-Oct-04

4페이지










CNY75B 전자부품, 판매, 대치품
CNY75A/ B/ C/ GA/ GB/ GC
Vishay Semiconductors
1000
800
VCE=5V
600
400
200
0
0.01
95 11035
0.1 1 10
IC – Collector Current ( mA )
100
Figure 15. DC Current Gain vs. Collector Current
1000
CNY75A(G)
VCE=5V
100
10
1
0.1
95 11036
1 10
IF – Forward Current ( mA )
100
Figure 16. Current Transfer Ratio vs. Forward Current
1000
CNY75B(G)
VCE=5V
100
10
1
0.1
95 11045
1 10
IF – Forward Current ( mA )
100
Figure 17. Current Transfer Ratio vs. Forward Current
1000
CNY75C(G)
VCE=5V
100
10
1
0.1
95 11046
1 10
IF – Forward Current ( mA )
100
Figure 18. Current Transfer Ratio vs. Forward Current
50
CNY75A(G)
40 Saturated Operation
VS=5V
RL=1kˇ
30
20
toff
10
ton
0
0
95 11033
5 10 15
IF – Forward Current ( mA )
20
Figure 19. Turn on / off Time vs. Forward Current
50
CNY75B(G)
40
Saturated Operation
VS=5V
RL=1kˇ
30
20
toff
10
0
0
95 11048
ton
5 10 15
IF – Forward Current ( mA )
20
Figure 20. Turn on / off Time vs. Forward Current
Document Number 83536
Rev. 1.7, 26-Oct-04
www.vishay.com
7

7페이지


구       성 총 10 페이지수
다운로드[ CNY75B.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
CNY75

Optocoupler with Phototransistor Output

Vishay Telefunken
Vishay Telefunken
CNY75A

Optocoupler with Phototransistor Output

Vishay Telefunken
Vishay Telefunken

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵