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PDF AOD4286 Data sheet ( Hoja de datos )
| Número de pieza | AOD4286 | |
| Descripción | 100V N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOD4286/AOI4286
100V N-Channel MOSFET
General Description
Product Summary
The AOD4286, AOI4286 uses trench MOSFET
technology that is uniquely optimized to provide the most
efficient high frequency switching performance. Both
conduction and switching power losses are minimized
due to an extremely low combination of RDS(ON), Ciss and
Coss. This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
100% UIS Tested
100V
14A
< 68mΩ
< 92mΩ
TopView
TO252
DPAK
Bottom View
Top View
TO-251A
IPAK
Bottom View
D
DD
DS
G AOD4286
DG
S
S
D
G AOI4286
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS
EAS
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
100
±20
14
10
25
4
3
4
0.8
30
15
2.5
1.6
-55 to 175
G
D
S
G
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
15
41
4
Max
20
50
5
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev.1. 0: October 2013
www.aosmd.com
Page 1 of 6
1 page  
AOD4286/AOI4286
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40 20
30 15
20 10
10
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 12: Power De-rating (Note F)
10000
5
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 13: Current De-rating (Note F)
1000
100
10
TA=25°C
17
5
2
10
1
1E-05
0.001
0.1
10
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
0 1000
18
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.001
1E-05
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev.1. 0: October 2013
www.aosmd.com
Page 5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AOD4286.PDF ] | |
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