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PDF GAP05SLT80-CAL Data sheet ( Hoja de datos )
| Número de pieza | GAP05SLT80-CAL | |
| Descripción | Silicon Carbide Power Schottky Diode | |
| Fabricantes | GeneSiC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de GAP05SLT80-CAL (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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Silicon Carbide Power
Schottky Diode
Features
8000 V Silicon Carbide Schottky rectifier
175 °C maximum operating temperature
Positive temperature coefficient of VF
Extremely fast switching speeds
Superior figure of merit QC/IF
Advantages
Improved circuit efficiency (Lower overall cost)
Low switching losses
Ease of paralleling devices without thermal runaway
Smaller heat sink requirements
Low reverse recovery current
Low device capacitance
Low reverse leakage current at operating temperature
Die Datasheet
GAP05SLT80-CAL
VRRM
IF
QC
= 8000 V
= 50 mA
= 8 nC
Die Size = 2.4 mm x 2.4 mm
Applications
Down Hole Oil Drilling, Geothermal Instrumentation
High Voltage Multipliers
Military Power Supplies
Electrical Specifications
Absolute Maximum Ratings
Parameter
Repetitive peak reverse voltage
Continuous forward current
RMS forward current
Power dissipation
Operating and storage temperature
Electrical Characteristics
Parameter
Diode forward voltage
Reverse current
Total capacitive charge
Total capacitance
Symbol
VRRM
IF
IF(RMS)
Ptot
Tj , Tstg
Conditions
TC = 25 °C
Values
8000
50
87
0.2
-55 to 175
Unit
V
mA
mA
W
°C
Symbol
VF
IR
QC
C
Conditions
IF = 50 mA, Tj = 25 °C
IF = 50 mA, Tj = 175 °C
VR = 8000 V, Tj = 25 °C
VR = 8000 V, Tj = 125 °C
VR = 1000 V
VR = 1 V, f = 1 MHz, Tj = 25 °C
VR = 400 V, f = 1 MHz, Tj = 25 °C
VR = 1000 V, f = 1 MHz, Tj = 25 °C
min.
Values
typ.
4.6
12
3.8
5.3
8
25
8
6
max.
Unit
V
µA
nC
pF
Feb 2015
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Pg1 of 4
1 page  
Die Datasheet
GAP05SLT80-CAL
SPICE Model Parameters
This is a secure document. Please copy this code from the SPICE model PDF file on our website
(http://www.genesicsemi.com/images/hit_sic/baredie/schottky/GAP05SLT80-CAL_SPICE.pdf)
into
LTSPICE (version 4) software for simulation of the GAP05SLT80-CAL.
* MODEL OF GeneSiC Semiconductor Inc.
*
* $Revision: 1.1
$
* $Date: 15-SEP-2014
$
*
* GeneSiC Semiconductor Inc.
* 43670 Trade Center Place Ste. 155
* Dulles, VA 20166
*
* COPYRIGHT (C) 2014 GeneSiC Semiconductor Inc.
* ALL RIGHTS RESERVED
*
* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY
* OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A
* PARTICULAR PURPOSE."
* Models accurate up to 2 times rated drain current.
*
* Start of GAP05SLT80-CAL SPICE Model
.SUBCKT GAP05SLT80 ANODE KATHODE
R1 ANODE INT R=((TEMP-24)*0.81); Temperature Dependant Resistor
D1 INT KATHODE GAP05SLT80_25C
.MODEL GAP05SLT80_25C D; Model of GAP05SLT80-220 Device at 25 C
+ IS
14.067E-15
+ N 1.3760
+ RS
42.6
+ IKF
157.39E-6
+ EG
1.2
+ XTI
-85
+ CJO
21.838E-12
+ M 0.258
+ VJ
3.198
+ BV
9000
+ IBV
1E-3
+ TT
1.0000E-10
+ VPK
8000
+ IAVE
3E-2
+ TYPE
SiC_Schottky
+ MFG
GeneSiC_Semiconductor
.ENDS
*
* End of GAP05SLT80-CAL SPICE Model
Sep 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Page 1 of 1
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet GAP05SLT80-CAL.PDF ] | |
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