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PDF GAP3SHT33-CAU Data sheet ( Hoja de datos )
| Número de pieza | GAP3SHT33-CAU | |
| Descripción | Silicon Carbide Power Schottky Diode | |
| Fabricantes | GeneSiC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de GAP3SHT33-CAU (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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Silicon Carbide Power
Schottky Diode
Features
• 3300 V Schottky rectifier
• 210 °C maximum operating temperature
• Positive temperature coefficient of VF
• Fast switching speeds
• Superior figure of merit QC/IF
Die Datasheet
GAP3SHT33-CAU
VRRM
IF @ 25 oC
QC
= 3300 V
= 0.3 A
= 20 nC
Advantages
• Improved circuit efficiency (Lower overall cost)
• Significantly reduced switching losses compare to Si PiN
diodes
• Ease of paralleling devices without thermal runaway
• Smaller heat sink requirements
• Low reverse recovery current
• Low device capacitance
Die Size = 1.39 mm x 1.39 mm
Applications
• Down Hole Oil Drilling, Geothermal Instrumentation
• High Voltage Multipliers
• Military Power Supplies
Maximum Ratings at Tj = 175 °C, unless otherwise specified
Parameter
Symbol
Conditions
Repetitive peak reverse voltage
Continuous forward current
RMS forward current
Surge non-repetitive forward current, Half Sine
Wave
Non-repetitive peak forward current
I2t value
Power dissipation
Operating and storage temperature
VRRM
IF
IF(RMS)
IF,SM
IF,max
∫i2 dt
Ptot
Tj , Tstg
TC ≤ 125 °C, RthJC = 1.69
TC ≤ 125 °C, RthJC = 1.69
TC = 25 °C, tP = 10 ms
TC = 125 °C, tP = 10 ms
TC = 25 °C, tP = 10 µs
TC = 25 °C, tP = 10 ms
TC = 25 °C, RthJC = 1.69
Values
3300
0.3
0.35
2
1
10
0.1
89
-55 to 210
Electrical Characteristics at Tj = 175 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Total capacitive charge
Switching time
Total capacitance
Symbol
VF
IR
QC
ts
C
Conditions
IF = 0.3 A, Tj = 25 °C
IF = 0.3 A, Tj = 175 °C
VR = 3300 V, Tj = 25 °C
VR = 3300 V, Tj = 175 °C
IF ≤ IF,MAX
dIF/dt = 35 A/μs
Tj = 175 °C
VR = 1500 V
VR = 1500 V
VR = 1 V, f = 1 MHz, Tj = 25 °C
VR = 400 V, f = 1 MHz, Tj = 25 °C
VR = 1000 V, f = 1 MHz, Tj = 25 °C
min.
Values
typ.
1.7
4.0
1
10
20
< 60
42
8
7
max.
2.2
5.0
10
100
Unit
V
A
A
A
A
A2S
W
°C
Unit
V
µA
nC
ns
pF
Feb 2015
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Pg1 of 4
1 page  
Die Datasheet
GAP3SHT33-CAU
SPICE Model Parameters
This is a secure document. Please copy this code from the SPICE model PDF file on our website
(http://www.genesicsemi.com/images/hit_sic/baredie/schottky/GAP3SHT33-CAU_SPICE.pdf)
into
LTSPICE (version 4) software for simulation of the GAP3SHT33-CAU.
* MODEL OF GeneSiC Semiconductor Inc.
*
* $Revision: 1.0
$
* $Date: 04-SEP-2013
$
*
* GeneSiC Semiconductor Inc.
* 43670 Trade Center Place Ste. 155
* Dulles, VA 20166
*
* COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc.
* ALL RIGHTS RESERVED
*
* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY
* OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A
* PARTICULAR PURPOSE."
* Models accurate up to 2 times rated drain current.
*
* Start of GAP3SHT33-CAU SPICE Model
*
.SUBCKT GAP3SHT33 ANODE KATHODE
R1 ANODE INT R=((TEMP-24)*0.0535); Temperature Dependant Resistor
D1 INT KATHODE GAP3SHT33_25C; Call the 25C Diode Model
D2 ANODE KATHODE GAP3SHT33_PIN; Call the PiN Diode Model
.MODEL GAP3SHT33_25C D
+ IS
1.39E-14
RS
2.88
+N
1.0120127
IKF
36.05007504
+ EG
1.2
XTI -3
+ CJO
6.01E-11
VJ
0.924257443
+M
0.3084545
FC
0.5
+ TT
1.00E-10
BV
3300
+ IBV
1.00E-03
VPK 3300
+ IAVE
3.00E-01
TYPE
SiC_Schottky
+ MFG
GeneSiC_Semiconductor
.MODEL GAP3SHT33_PIN D
+ IS
178.99E-18
RS
15
+N 5
EG 3.23
+ XTI
50
FC 0.5
+ TT
0
BV 3300
+ IBV
1.00E-03
VPK 3300
+ IAVE
3.00E-01
TYPE
SiC_PiN
.ENDS
* End of GAP3SHT33-CAU SPICE Model
Sep 2013
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Pg1 of 1
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet GAP3SHT33-CAU.PDF ] | |
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