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PDF GB01SHT06-CAU Data sheet ( Hoja de datos )
| Número de pieza | GB01SHT06-CAU | |
| Descripción | High Temperature Silicon Carbide Power Schottky Diode | |
| Fabricantes | GeneSiC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de GB01SHT06-CAU (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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High Temperature Silicon Carbide
Power Schottky Diode
Features
650 V Schottky rectifier
210 °C maximum operating temperature
Zero reverse recovery charge
Superior surge current capability
Positive temperature coefficient of VF
Temperature independent switching behavior
Lowest figure of merit QC/IF
Available screened to Mil-PRF-19500
Die Datasheet
GB01SHT06-CAU
VRRM
IF @ 25 oC
QC
= 650 V
= 2.5 A
= 7 nC
Die Size = 0.9 mm x 0.9 mm
Advantages
High temperature operation
Improved circuit efficiency (Lower overall cost)
Low switching losses
Ease of paralleling devices without thermal runaway
Smaller heat sink requirements
Industry’s lowest reverse recovery charge
Industry’s lowest device capacitance
Ideal for output switching of power supplies
Best in class reverse leakage current at operating temperature
Applications
Down Hole Oil Drilling
Geothermal Instrumentation
Solenoid Actuators
General Purpose High-Temperature Switching
Amplifiers
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Maximum Ratings at Tj = 210 °C, unless otherwise specified
Parameter
Symbol
Conditions
Repetitive peak reverse voltage
Continuous forward current
Continuous forward current
RMS forward current
Surge non-repetitive forward current, Half Sine
Wave
Non-repetitive peak forward current
I2t value
Power dissipation
Operating and storage temperature
VRRM
IF
IF
IF(RMS)
IF,SM
IF,max
∫i2 dt
Ptot
Tj , Tstg
TC = 25 °C, RthJC = 9.52
TC ≤ 190 °C, RthJC = 9.52
TC ≤ 190 °C, RthJC = 9.52
TC = 25 °C, tP = 10 ms
TC = 25 °C, tP = 10 µs
TC = 25 °C, tP = 10 ms
TC = 25 °C, RthJC = 9.52
Values
650
2.5
0.75
1.3
10
65
0.5
24
-55 to 210
Electrical Characteristics at Tj = 210 °C, unless otherwise specified
Parameter
Symbol
Conditions
Diode forward voltage
Reverse current
Total capacitive charge
Switching time
Total capacitance
VF
IF = 0.75 A, Tj = 25 °C
IF = 0.75 A, Tj = 210 °C
IR
VR = 650 V, Tj = 25 °C
VR = 650 V, Tj = 210 °C
QC
ts
IF ≤ IF,MAX
dIF/dt = 200 A/μs
Tj = 210 °C
VR = 400 V
VR = 400 V
VR = 1 V, f = 1 MHz, Tj = 25 °C
C VR = 400 V, f = 1 MHz, Tj = 25 °C
VR = 650 V, f = 1 MHz, Tj = 25 °C
min.
Values
typ.
1.4
2.3
1
5
7
< 17
76
12
12
max.
5
50
Unit
V
A
A
A
A
A
A2S
W
°C
Unit
V
µA
nC
ns
pF
Feb 2015
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Pg1 of 4
1 page  
Die Datasheet
GB01SHT06-CAU
SPICE Model Parameters
This is a secure document. Please copy this code from the SPICE model PDF file on our website
(http://www.genesicsemi.com/images/hit_sic/baredie/schottky/GB01SHT06-CAU_SPICE.pdf)
into
LTSPICE (version 4) software for simulation of the GB01SHT06-CAU.
* MODEL OF GeneSiC Semiconductor Inc.
*
* $Revision: 1.0
$
* $Date: 05-SEP-2013
$
*
* GeneSiC Semiconductor Inc.
* 43670 Trade Center Place Ste. 155
* Dulles, VA 20166
*
* COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc.
* ALL RIGHTS RESERVED
*
* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY
* OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A
* PARTICULAR PURPOSE."
* Models accurate up to 2 times rated drain current.
*
* Start of GB01SHT06-CAU SPICE Model
*
.SUBCKT GB01SHT06 ANODE KATHODE
D1 ANODE KATHODE GB01SHT06_25C; Call the Schottky Diode Model
D2 ANODE KATHODE GB01SHT06_PIN; Call the PiN Diode Model
.MODEL GB01SHT06_25C D
+ IS
3.57E-18
RS
0.49751
+ TRS1
0.0057
TRS2
2.40E-05
+N 1
IKF 322
+ EG
1.2
XTI 3
+ CJO
9.12E-11
VJ
0.371817384
+M
1.527759838
FC
0.5
+ TT
1.00E-10
BV
650
+ IBV
1.00E-03
VPK 650
+ IAVE
1
TYPE
SiC_Schottky
+ MFG
GeneSiC_Semiconductor
.MODEL GB01SHT06_PIN D
+ IS
5.73E-11
RS
0.72994
+N 5
IKF 800
+ EG
3.23
XTI -14
+ FC
0.5
TT 0
+ BV
650
IBV 1.00E-03
+ VPK
650
IAVE
1
+ TYPE
SiC_PiN
.ENDS
*
* End of GB01SHT06-CAU SPICE Model
Sep 2013
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Page 1 of 1
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet GB01SHT06-CAU.PDF ] | |
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