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부품번호 | GA20JT06-CAL 기능 |
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기능 | OFF Silicon Carbide Junction Transistor | ||
제조업체 | GeneSiC | ||
로고 | |||
전체 10 페이지수
Die Datasheet
GA20JT06-CAL
Normally – OFF Silicon Carbide
Junction Transistor
Features
• 210°C maximum operating temperature
• Gate Oxide Free SiC switch
• Exceptional Safe Operating Area
• Excellent Gain Linearity
• Temperature Independent Switching Performance
• Low Output Capacitance
• Positive Temperature Co-efficient of RDS,ON
• Suitable for connecting an anti-parallel diode
VDS
RDS(ON)
ID @ 25 oC
hFE
=
=
=
=
600 V
65 mΩ
45 A
110
Die Size = 2.85 mm x 2.85 mm
Advantages
• Compatible with Si MOSFET/IGBT gate-drivers
• > 20 µs Short-Withstand Capability
• Lowest-in-class Conduction Losses
• High Circuit Efficiency
• Minimal Input Signal Distortion
• High Amplifier Bandwidth
Applications
• Down Hole Oil Drilling, Geothermal Instrumentation
• Hybrid Electric Vehicles (HEV)
• Solar Inverters
• Switched-Mode Power Supply (SMPS)
• Power Factor Correction (PFC)
• Induction Heating
• Uninterruptible Power Supply (UPS)
• Motor Drives
Absolute Maximum Ratings (TC = 25 oC unless otherwise specified)
Parameter
Symbol
Conditions
Drain – Source Voltage
Continuous Drain Current
Continuous Drain Current
Gate Peak Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
VDS
ID
ID
IGM
RBSOA
SCSOA
VGS = 0 V
TC = 25 °C
TC > 125°C, assumes RthJC < 0.53 oC/W
TVJ = 210 oC,
Clamped Inductive Load
TVJ = 210 oC, IG = 1 A, VDS = 400 V,
Non Repetitive
Reverse Gate – Source Voltage
Reverse Drain – Source Voltage
VGS
VDS
Operating Junction and Storage Temperature
Tj, Tstg
Maximum Processing Temperature
TProc
10 min. maximum
Values
600
45
20
1.3
ID,max = 20
@ VDS ≤ VDSmax
20
30
40
-55 to 210
325
Unit
V
A
A
A
A
µs
V
V
°C
°C
Electrical Characteristics
Parameter
Symbol
Conditions
Values
min. typ. max.
Unit
On Characteristics
Drain – Source On Resistance
Gate – Source Saturation Voltage
DC Current Gain
Off Characteristics
Drain Leakage Current
Gate – Source Leakage Current
RDS(ON)
VGS,SAT
hFE
ID = 20 A, IG = 400 mA, Tj = 25 °C
ID = 20 A, IG = 500 mA, Tj = 125 °C
ID = 20 A, IG = 1000 mA, Tj = 175 °C
ID = 20 A, IG = 1000 mA, Tj = 210 °C
D = 20 A, ID/IG = 40, Tj = 25 °C
ID = 20 A, ID/IG = 30, Tj = 175 °C
VDS = 5 V, ID = 20 A, Tj = 25 °C
VDS = 5 V, ID = 20 A, Tj = 125 °C
VDS = 5 V, ID = 20 A, Tj = 175 °C
VDS = 5 V, ID = 20 A, Tj = 210 °C
IDSS
VR = 600 V, VGS = 0 V, Tj = 25 °C
VR = 600 V, VGS = 0 V, Tj = 210 °C
IGSS
VGS = -20 V, Tj = 25 °C
65
90
110
140
3.44
3.24
110
78
73
71
10
100
20
mΩ
V
µA
nA
Feb 2015
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Pg1 of 9
Die Datasheet
GA20JT06-CAL
Driving the GA20JT06-CAL
Drive Topology
TTL Logic
Constant Current
High Speed – Boost Capacitor
High Speed – Boost Inductor
Proportional
Pulsed Power
Gate Drive Power
Consumption
High
Medium
Medium
Low
Lowest
Medium
Switching
Frequency
Low
Medium
High
High
High
N/A
Application Emphasis
Wide Temperature Range
Wide Temperature Range
Fast Switching
Ultra Fast Switching
Wide Drain Current Range
Pulse Power
Availability
Coming Soon
Coming Soon
Production
Coming Soon
Coming Soon
Coming Soon
A: Static TTL Logic Driving
The GA20JT06-CAL may be driven using direct (5 V) TTL logic after current amplification. The (amplified) current level of the supply must
meet or exceed the steady state gate current (IG,steady) required to operate the GA20JT06- CAL. The power level of the supply can be
estimated from the target duty cycle of the particular application. IG,steady is dependent on the anticipated drain current ID through the SJT and
the DC current gain hFE, it may be calculated from the following equation. An accurate value of the hFE may be read from Figure 6.
������������������������ ,������������������������������������������������������������������������
≈
������������������������
ℎ������������������������ (������������,
������������������������ )
∗
1.5
TTL
Gate Signal
5/0V
TTL i/p
5V
IG,steady
SiC SJT
G
D
S
Figure 9: TTL Gate Drive Schematic
B: High Speed Driving
The SJT is a current controlled transistor which requires a positive gate current for turn-on as well as to remain in on-state. An ideal gate
current waveform for ultra-fast switching of the SJT, while maintaining low gate drive losses, is shown in Figure 10 which features a positive
current peak during turn-on, a negative current peak during turn-off, and continuous gate current to remain on.
Figure 10: An idealized gate current waveform for fast switching of an SJT.
An SJT is rapidly switched from its blocking state to on-state, when the necessary gate charge, QG, for turn-on is supplied by a burst of high
gate current, IG,on, until the gate-source capacitance, CGS, and gate-drain capacitance, CGD, are fully charged.
������������������������������������ = ������������������������,������������������������ ∗ ������������1
������������������������������������ ≥ ������������������������������������ + ������������������������������������
Feb 2015
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Pg4 of 9
4페이지 Die Datasheet
GA20JT06-CAL
C: Proportional Gate Current Driving
For applications in which the GA20JT06- CAL will operate over a wide range of drain current conditions, it may be beneficial to drive the
device using a proportional gate drive topology to optimize gate drive power consumption. A proportional gate driver relies on instantaneous
drain current ID feedback to vary the steady state gate current IG,steady supplied to the GA20JT06- CAL
C:1: Voltage Controlled Proportional Driver
The voltage controlled proportional driver relies on a gate drive IC to detect the GA20JT06- CAL drain-source voltage VDS during on-state to
sense ID. The gate drive IC will then increase or decrease IG,steady in response to ID. This allows IG,steady, and thus the gate drive power
consumption, to be reduced while ID is relatively low or for IG,steady to increase when is ID higher. A high voltage diode connected between the
drain and sense protects the IC from high-voltage when the driver and GA20JT06- CAL are in off-state. A simplified version of this topology is
shown in Figure 15, additional information will be available in the future at http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Gate Signal
Sense
Proportional
Gate Current
Driver
Signal
Output
HV Diode
IG,steady
G
SiC SJT
D
S
Figure 15: Simplified Voltage Controlled Proportional Driver
C:2: Current Controlled Proportional Driver
The current controlled proportional driver relies on a low-loss transformer in the drain or source path to provide feedback ID of the GA20JT06-
CAL during on-state to supply IG,steady into the device gate. IG,steady will then increase or decrease in response to ID at a fixed forced current gain
which is set be the turns ratio of the transformer, hforce = ID / IG = N2 / N1. GA20JT06- CAL is initially tuned-on using a gate current pulse
supplied into an RC drive circuit to allow ID current to begin flowing. This topology allows IG,steady, and thus the gate drive power consumption,
to be reduced while ID is relatively low or for IG,steady to increase when is ID higher. A simplified version of this topology is shown in Figure 16,
additional information will be available in the future at http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/.
Feb 2015
Gate Signal
N2
SiC SJT D
G
S
N3 N1
N2
Figure 16: Simplified Current Controlled Proportional Driver
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Pg7 of 9
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부품번호 | 상세설명 및 기능 | 제조사 |
GA20JT06-CAL | OFF Silicon Carbide Junction Transistor | GeneSiC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |