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PDF BUY58 Data sheet ( Hoja de datos )
| Número de pieza | BUY58 | |
| Descripción | Silicon NPN Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUY58
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min.)
·Low Collector Saturation Voltage-
: VCE(sat)= 1.3V@ IC= 10A
APPLICATIONS
·Designed for general switching applications at higher outputs.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
250 V
VCES
Collector-Emitter Voltage
250 V
VCEO Collector-Emitter Voltage
160 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
15 A
ICM Collector Current-Peak
25 A
IB Base Current-Continuous
PC
Collector Power Dissipation
@TC≤25℃
Tj Junction Temperature
Tstg Storage Temperature Range
5
117
175
-65~175
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 1.28 ℃/W
·
isc website：www.iscsemi.cn
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1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BUY58.PDF ] | |
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