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부품번호 | HFU5N60F 기능 |
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기능 | 600V N-Channel MOSFET | ||
제조업체 | SemiHow | ||
로고 | |||
HFD5N60F / HFU5N60F
600V N-Channel MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 12.5 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) ȍ7\S#9GS=10V
100% Avalanche Tested
Dec 2015
BVDSS = 600 V
RDS(on) typ ȍ
ID = 5 A
D-PAK I-PAK
2
1
3
HFD5N60F
1
2
3
HFU5N60F
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
PD
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TA = 25)
Power Dissipation (TC = 25)
- Derate above 25
600
5.0
3.2
20
ρ30
110
5.0
7.8
2.5
78
0.62
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
W
W
W/
Thermal Resistance Characteristics
Symbol
Parameter
RșJC
Junction-to-Case
RșJA Junction-to-Ambient*
RșJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
1.6
50
110
Units
/W
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Typical Characteristics (continued)
1.2
1.1
1.0
0.9
0.8
-100
Note :
1. V = 0 V
GS
2. ID = 250PA
-50 0 50 100 150
T , Junction Temperature [oC]
J
200
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation in This Area
is Limited by R DS(on)
101 10 Ps
100 Ps
100 DC 1 ms
10-1
100
* Notes :
1. TC = 25 oC
2. T = 150 oC
J
3. Single Pulse
101 102
V , Drain-Source Voltage [V]
DS
10 ms
100 ms
103
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
-100
Note :
1. VGS = 10 V
2. I = 2.5 A
D
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs Temperature
5
4
3
2
1
0
25 50 75 100 125
TC, Case Temperature [oC]
Figure 10. Maximum Drain Current
vs Case Temperature
150
100
D=0.5
0.2
10-1
0.1
0.05
* Notes :
1. ZTJC(t) = 1.6 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZTJC(t)
0.02
0.01
10-2
10-5
PDM
single pulse
10-4
10-3
10-2
t1
t2
10-1
100
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
101
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4페이지 Package Dimension
kTwhrG
O{vTY\YsPG
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͦ͑͢͡
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ HFU5N60F.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
HFU5N60F | 600V N-Channel MOSFET | SemiHow |
HFU5N60S | N-Channel MOSFET | SemiHow |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |