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Número de pieza | 5SNA0400J650100 | |
Descripción | IGBT Module | |
Fabricantes | ABB | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 5SNA0400J650100 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! VCE =
IC =
6500 V
400 A
ABB HiPakTM
IGBT Module
5SNA 0400J650100
• Low-loss, rugged SPT chip-set
• Smooth switching SPT chip-set for
good EMC
• High insulation package
• AlSiC base-plate for high power
cycling capability
• AlN substrate for low thermal
resistance
Doc. No. 5SYA 1592-01 Jun 07
Maximum rated values 1)
Parameter
Symbol Conditions
min max Unit
Collector-emitter voltage
VCES VGE = 0 V, Tvj ≥ 25 °C
6500 V
DC collector current
IC Tc = 85 °C
400 A
Peak collector current
ICM tp = 1 ms, Tc = 85 °C
800 A
Gate-emitter voltage
VGES
-20 20 V
Total power dissipation
Ptot Tc = 25 °C, per switch (IGBT)
7350 W
DC forward current
IF
400 A
Peak forward current
Surge current
IGBT short circuit SOA
IFRM
IFSM
VR = 0 V, Tvj = 125 °C,
tp = 10 ms, half-sinewave
tpsc
VCC = 4400 V, VCEMCHIP ≤ 6500 V
VGE ≤ 15 V, Tvj ≤ 125 °C
800
4000
A
A
10 µs
Isolation voltage
Visol 1 min, f = 50 Hz
10200 V
Junction temperature
Tvj
125 °C
Junction operating temperature Tvj(op)
-40 125 °C
Case temperature
Tc
-40 125 °C
Storage temperature
Tstg
-40 125 °C
Mounting torques 2)
Ms Base-heatsink, M6 screws
Mt1 Main terminals, M8 screws
46
8 10 Nm
Mt2 Auxiliary terminals, M4 screws
23
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
2) For detailed mounting instructions refer to ABB Document No. 5SYA2039
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
1 page 5SNA 0400J650100
800
700
600
25 °C
500 125 °C
400
300
200
100
VGE = 15V
0
012345678
VCE [V]
Fig. 1 Typical on-state characteristics, chip level
800
VCE = 20 V
700
600
500
400
300
25 °C
200 125 °C
100
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13
VGE [V]
Fig. 2 Typical transfer characteristics, chip level
800
700
600
17V
500 15V
13V
400 11V
300
200
100
0
0
9V
12
345
VCE [V]
Tvj = 25 °C
678
800
700 17V
15V
600 13V
500 11V
400
300
9V
200
100
Tvj = 125 °C
0
0 1 2 3 4 5 6 7 8 9 10
VCE [V]
Fig. 3 Typical output characteristics, chip level
Fig. 4 Typical output characteristics, chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1592-01 Jun 07
page 5 of 9
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet 5SNA0400J650100.PDF ] |
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