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부품번호 | 5SNA0800N330100 기능 |
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기능 | IGBT Module | ||
제조업체 | ABB | ||
로고 | |||
전체 9 페이지수
VCE =
IC =
3300 V
800 A
ABB HiPakTM
IGBT Module
5SNA 0800N330100
• Low-loss, rugged SPT chip-set
• Smooth switching SPT chip-set for
good EMC
• Industry standard package
• High power density
• AlSiC base-plate for high power
cycling capability
• AlN substrate for low thermal
resistance
Doc. No. 5SYA 1591-00 Jan 07
Maximum rated values 1)
Parameter
Symbol Conditions
min
Collector-emitter voltage
VCES VGE = 0 V, Tvj ≥ 25 °C
DC collector current
IC Tc = 80 °C
Peak collector current
ICM tp = 1 ms, Tc = 80 °C
Gate-emitter voltage
VGES
-20
Total power dissipation
Ptot Tc = 25 °C, per switch (IGBT)
DC forward current
IF
Peak forward current
Surge current
IGBT short circuit SOA
IFRM
IFSM
VR = 0 V, Tvj = 125 °C,
tp = 10 ms, half-sinewave
tpsc
VCC = 2500 V, VCEMCHIP ≤ 3300 V
VGE ≤ 15 V, Tvj ≤ 125 °C
Isolation voltage
Visol 1 min, f = 50 Hz
Junction temperature
Tvj
Junction operating temperature Tvj(op)
-40
Case temperature
Tc
-40
Storage temperature
Tstg
-40
Mounting torques 2)
Ms Base-heatsink, M6 screws
Mt1 Main terminals, M8 screws
4
8
Mt2 Auxiliary terminals, M4 screws
2
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
2) For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
max
3300
800
1600
20
7700
800
1600
8000
10
6000
150
125
125
125
6
10
3
Unit
V
A
A
V
W
A
A
A
µs
V
°C
°C
°C
°C
Nm
Electrical configuration
Outline drawing 2)
5SNA 0800N330100
Note: all dimensions are shown in mm
2) For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.
This product has been designed and qualified for industrial level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1591-00 Jan 07
page 4 of 9
4페이지 5SNA 0800N330100
1000
100
10
Cies
Coes
Cres
VGE = 0V
fOSC = 1 MHz
VOSC = 50 mV
1
0 5 10 15 20 25 30 35
VCE [V]
Fig. 9 Typical capacitances
vs collector-emitter voltage
20
15
VCC = 1800 V
VCC = 2500 V
10
5
IC = 800 A
Tvj = 25 °C
0
012345678
Qg [µC]
Fig. 10 Typical gate charge characteristics
2.5
VCC ≤ 2500 V, Tvj = 125 °C
VGE = ±15 V, RG = 2.2 ohm
2
1.5
1
0.5
Chip
Module
0
0 500 1000 1500 2000 2500 3000 3500
VCE [V]
Fig. 11 Turn-off safe operating area (RBSOA)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1591-00 Jan 07
page 7 of 9
7페이지 | |||
구 성 | 총 9 페이지수 | ||
다운로드 | [ 5SNA0800N330100.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
5SNA0800N330100 | IGBT Module | ABB |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |