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5SNA1200E250100 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 5SNA1200E250100
기능 IGBT Module
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5SNA1200E250100 데이터시트, 핀배열, 회로
VCE =
IC =
2500 V
1200 A
ABB HiPakTM
IGBT Module
5SNA 1200E250100
Low-loss, rugged SPT chip-set
Smooth switching SPT chip-set for
good EMC
Industry standard package
High power density
AlSiC base-plate for high power
cycling capability
AlN substrate for low thermal
resistance
Doc. No. 5SYA 1557-02 July 04
Maximum rated values 1)
Parameter
Symbol Conditions
Collector-emitter voltage
DC collector current
Peak collector current
Gate-emitter voltage
Total power dissipation
DC forward current
Peak forward current
Surge current
IGBT short circuit SOA
Isolation voltage
Junction temperature
Junction operating temperature
Case temperature
Storage temperature
Mounting torques 2)
VCES
IC
ICM
VGES
Ptot
IF
IFRM
IFSM
tpsc
Visol
Tvj
Tvj(op)
Tc
Tstg
M1
M2
M3
VGE = 0 V
Tc = 80 °C
tp = 1 ms, Tc = 80 °C
Tc = 25 °C, per switch (IGBT)
VR = 0 V, Tvj = 125 °C,
tp = 10 ms, half-sinewave
VCC = 1900 V, VCEMCHIP 2500 V
VGE 15 V, Tvj 125 °C
1 min, f = 50 Hz
Base-heatsink, M6 screws
Main terminals, M8 screws
Auxiliary terminals, M4 screws
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
2) For detailed mounting instructions refer to ABB Document No. 5SYA2039
min max Unit
2500 V
1200 A
2400 A
-20 20 V
11000 W
1200 A
2400 A
11000 A
10 µs
5000 V
150 °C
-40 125 °C
-40 125 °C
-40 125 °C
46
8 10 Nm
23
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.




5SNA1200E250100 pdf, 반도체, 판매, 대치품
Electrical configuration
Outline drawing 2)
5SNA 1200E250100
Note: all dimensions are shown in mm
2) For detailed mounting instructions refer to ABB Document No. 5SYA2039
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.
This product has been designed and qualified for Industrial Level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1557-02 July 04
page 4 of 9

4페이지










5SNA1200E250100 전자부품, 판매, 대치품
5SNA 1200E250100
1000
20
VGE = 0 V
fOSC = 1 MHz
VOSC = 50 mV
Cies
15
100
VCC = 1250 V
VCC = 1800 V
Coes
10
Cres
1
0 5 10 15 20 25 30 35
VCE [V]
Fig. 9 Typical capacitances
vs collector-emitter voltage
10
5
IC = 1200 A
Tvj = 25 °C
0
0 2 4 6 8 10 12
Qg [µC]
Fig. 10 Typical gate charge characteristics
2.5
VCC 1900 V, Tvj = 125 °C
VGE = ±15 V, RG = 1.5 ohm
2
1.5
1
0.5
0
0
Chip
Module
500 1000 1500 2000 2500 3000
VCE [V]
Fig. 11 Turn-off safe operating area (RBSOA)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1557-02 July 04
page 7 of 9

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전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

휴대전화 : 010-3582-2743


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