Datasheet.kr   

5SNA1200G330100 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 5SNA1200G330100
기능 IGBT Module
제조업체 ABB
로고 ABB 로고 


전체 9 페이지

		

No Preview Available !

5SNA1200G330100 데이터시트, 핀배열, 회로
VCE =
IC =
3300 V
1200 A
ABB HiPakTM
IGBT Module
5SNA 1200G330100
Low-loss, rugged SPT chip-set
Smooth switching SPT chip-set for
good EMC
High insulation package
High power density
AlSiC base-plate for high power
cycling capability
AlN substrate for low thermal
resistance
Doc. No. 5SYA1563-00 Apr.06
Maximum rated values 1)
Parameter
Symbol Conditions
min max Unit
Collector-emitter voltage
VCES VGE = 0 V
DC collector current
IC Tc = 80 °C
Peak collector current
ICM tp = 1 ms, Tc = 80 °C
Gate-emitter voltage
VGES
-20
Total power dissipation
Ptot Tc = 25 °C, per switch (IGBT)
DC forward current
IF
Peak forward current
Surge current
IGBT short circuit SOA
IFRM
IFSM
VR = 0 V, Tvj = 125 °C,
tp = 10 ms, half-sinewave
tpsc
VCC = 2500 V, VCEMCHIP 3300 V
VGE 15 V, Tvj 125 °C
Isolation voltage
Visol 1 min, f = 50 Hz
Junction temperature
Tvj
Junction operating temperature Tvj(op)
-40
Case temperature
Tc
-40
Storage temperature
Tstg
-40
Ms Base-heatsink, M6 screws
4
Mounting torques 2)
Mt1 Main terminals, M8 screws
8
Mt2 Auxiliary terminals, M4 screws
2
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
2) For detailed mounting instructions refer to ABB Document No. 5SYA2039
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
3300
1200
2400
20
11750
1200
2400
V
A
A
V
W
A
A
14000 A
10 µs
10200 V
125 °C
125 °C
125 °C
125 °C
6
10 Nm
3




5SNA1200G330100 pdf, 반도체, 판매, 대치품
Electrical configuration
Outline drawing 2)
5SNA 1200G330100
Note: all dimensions are shown in mm
2) For detailed mounting instructions refer to ABB Document No. 5SYA2039
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.
This product has been designed and qualified for Industrial Level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1563-00 Apr.06
page 4 of 9

4페이지










5SNA1200G330100 전자부품, 판매, 대치품
5SNA 1200G330100
1000
100
10
Cies
Coes
Cres
VGE = 0V
fOSC = 1 MHz
VOSC = 50 mV
1
0 5 10 15 20 25 30 35
VCE [V]
Fig. 9 Typical capacitances
vs collector-emitter voltage
20
VCC = 1800 V
15
VCC = 2500 V
10
5
IC = 1200 A
Tvj = 25 °C
0
0123456789
Qg [µC]
Fig. 10 Typical gate charge characteristics
2.5
VCC 2500 V, Tvj = 125 °C
VGE = ±15 V, RG = 1.5 ohm
2
1.5
1
0.5
0
0
Chip
Module
500 1000 1500 2000 2500 3000 3500
VCE [V]
Fig. 11 Turn-off safe operating area (RBSOA)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1563-00 Apr.06
page 7 of 9

7페이지



구       성총 9 페이지
다운로드[ 5SNA1200G330100.PDF 데이터시트 ]
구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

휴대전화 : 010-3582-2743


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877, [ 홈페이지 ]



링크공유

링크 :

관련 데이터시트

부품번호상세설명 및 기능제조사
5SNA1200G330100

IGBT Module

ABB
ABB

추천 데이터시트

부품번호상세설명 및 기능제조사
CQ1565RT

FSCQ1565RT, Green Mode Fairchild Power Switch. In general, a Quasi-Resonant Converter (QRC) shows lower EMI and higher power conversion efficiency compared to conventional hard-switched converter with a fixed switching frequency.

Fairchild
Fairchild
KF16N25D

MOSFET의 기능은 N Channel MOS Field effect transistor입니다. This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters and switching mode power supplies.( Vdss=250V, Id=13A )

KEC
KEC

DataSheet.kr    |   2018   |  연락처   |  링크모음   |   검색  |   사이트맵