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부품번호 | 5SNA1600N170100 기능 |
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기능 | IGBT Module | ||
제조업체 | ABB | ||
로고 | |||
전체 9 페이지수
VCE =
IC =
1700 V
1600 A
ABB HiPakTM
IGBT Module
5SNA 1600N170100
• Low-loss, rugged SPT chip-set
• Smooth switching SPT chip-set for
good EMC
• Industry standard package
• High power density
• AlSiC base-plate for high power
cycling capability
• AlN substrate for low thermal
resistance
Doc. No. 5SYA1564-01 Oct 06
Maximum rated values 1)
Parameter
Symbol Conditions
min max Unit
Collector-emitter voltage
VCES VGE = 0 V, Tvj ≥ 25 °C
1700 V
DC collector current
IC Tc = 80 °C
1600 A
Peak collector current
ICM tp = 1 ms, Tc = 80 °C
3200 A
Gate-emitter voltage
VGES
-20 20 V
Total power dissipation
Ptot Tc = 25 °C, per switch (IGBT)
9100 W
DC forward current
IF
1600 A
Peak forward current
Surge current
IGBT short circuit SOA
IFRM
IFSM
VR = 0 V, Tvj = 125 °C,
tp = 10 ms, half-sinewave
tpsc
VCC = 1200 V, VCEMCHIP ≤ 1700 V
VGE ≤ 15 V, Tvj ≤ 125 °C
3200 A
13200 A
10 µs
Isolation voltage
Visol 1 min, f = 50 Hz
4000 V
Junction temperature
Tvj
150 °C
Junction operating temperature Tvj(op)
-40 125 °C
Case temperature
Tc
-40 125 °C
Storage temperature
Tstg
-40 125 °C
Mounting torques 2)
Ms Base-heatsink, M6 screws
Mt1 Main terminals, M8 screws
46
8 10 Nm
Mt2 Auxiliary terminals, M4 screws
23
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
2) For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Electrical configuration
Outline drawing 2)
5SNA 1600N170100
Note: all dimensions are shown in mm
2) For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.
This product has been designed and qualified for industrial level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1564-01 Oct 06
page 4 of 9
4페이지 5SNA 1600N170100
1000
20
Cies
100
Coes
VCC = 900 V
15
VCC = 1300 V
10
10
1
0
Cres
VGE = 0 V
fOSC = 1 MHz
VOSC = 50 mV
5 10 15 20 25 30 35
VCE [V]
Fig. 9 Typical capacitances
vs collector-emitter voltage
5
IC = 1600 A
Tvj = 25 °C
0
0 2 4 6 8 10 12
Qg [µC]
Fig. 10 Typical gate charge characteristics
2.5
VCC ≤ 1200 V, Tvj = 125 °C
VGE = ±15 V, RG = 0.82 ohm
2
1.5
1
0.5
0
0
Chip
Module
500
1000
VCE [V]
1500
2000
Fig. 11 Turn-off safe operating area (RBSOA)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1564-01 Oct 06
page 7 of 9
7페이지 | |||
구 성 | 총 9 페이지수 | ||
다운로드 | [ 5SNA1600N170100.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
5SNA1600N170100 | IGBT Module | ABB |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |