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부품번호 | 5SNS0300U120100 기능 |
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기능 | IGBT Module | ||
제조업체 | ABB | ||
로고 | |||
VCE =
IC =
1200 V
300 A
IGBT Module LoPak5 SPT
5SNS 0300U120100
· Low-loss, rugged SPT chip-set
· Smooth switching SPT chip-set for
good EMC
· Low profile compact baseless
package for high power cycling
capability
· Snap-on PCB assembly
· Integrated PTC substrate
temperature sensor
Doc. No. 5SYA1528-02 July 03
Maximum rated values 1)
Parameter
Symbol Conditions
Collector-emitter voltage
DC collector current
Peak collector current
Gate-emitter voltage
Total power dissipation
DC forward current
Peak forward current
Surge current
IGBT short circuit SOA
Isolation voltage
Junction temperature
Case operating temperature
Storage temperature
Mounting torques
VCES
IC
ICM
VGES
Ptot
IF
IFM
IFSM
tpsc
Visol
Tvj
Tc(op)
Tstg
M1
M2
VGE = 0 V, Tvj ³ 25 °C
Th = 60 °C
tp = 1 ms, Th = 60 °C
Th = 25 °C, per switch (IGBT)
VR = 0 V, Tvj = 125 °C,
tp = 10 ms, half-sinewave
VCC = 900 V, VCEMCHIP £ 1200 V
VGE £ 15 V, Tvj £ 125 °C
1 min, f = 50 Hz
Base-heatsink, M5 screws
Main terminals, M6 screws
1) Maximum rated values indicate limits beyond which damage to the device may occur
min
1200
-20
max
300
600
20
960
300
600
Unit
V
A
A
V
W
A
A
3600 A
10 µs
2500 V
150 °C
-40 125 °C
-40 125 °C
23
Nm
45
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Electrical configuration
Outline drawing
5SNS 0300U120100
For mounting instructions refer to ABB document No. 5SYA 2017
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1528-02 July 03
page 4 of 9
4페이지 5SNS 0300U120100
100
Cies
VGE = 0 V
fOSC = 1 MHz
VOSC = 50 mV
10
Coes
Cres
1
0 5 10 15 20 25 30 35
VCE [V]
20
15
10
5
0
0
VCC = 600 V
VCC = 800 V
IC = 300 A
Tvj = 25 °C
12
Qg [µC]
3
Fig. 9 Typical capacitances
vs collector-emitter voltage
Fig. 10 Typical gate charge characteristics
400
VGE ³ 15 V
Tvj = 150 °C
300
200
100
IGBT
Diode
0
0 20 40 60 80 100 120 140 160
Th [°C]
Fig. 11 Rated current vs temperature
2000
1800
1600
1400
1200
1000
800
600
400
RT
= R eB(1 T -1 T0 )
T0
RT0 = 1kW (±3 %), B = -760 K (±2%), T0 = 298 K
200
0
0 20 40 60 80 100 120 140
T [°C]
Fig. 12 PTC temperature sensor
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1528-02 July 03
page 7 of 9
7페이지 | |||
구 성 | 총 9 페이지수 | ||
다운로드 | [ 5SNS0300U120100.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
5SNS0300U120100 | IGBT Module | ABB |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |