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PDF W9NK95Z Data sheet ( Hoja de datos )
| Número de pieza | W9NK95Z | |
| Descripción | STW9NK95Z | |
| Fabricantes | STMicroelectronics | |
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STW9NK95Z
N-channel 950 V - 1.15 Ω - 7 A - TO-247
Zener-protected SuperMESHTM Power MOSFET
Features
Type
STW9NK95Z
VDSS
RDS(on)
Max
ID
950 V < 1.38 Ω 7 A
Pw
160 W
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
Application
■ Switching applications
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
3
2
1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STW9NK95Z
Marking
9NK95Z
Package
TO-247
Packaging
Tube
July 2008
Rev 2
1/12
www.st.com
12
1 page  
STW9NK95Z
Electrical characteristics
Table 7.
Symbol
Switching times
Parameter
td(on)
tr
Turn-on delay time
Rise Time
td(off)
tf
Turn-off delay time
Fall time
Test conditions
VDD= 475 V, ID= 3.6 A,
RG= 4.7 Ω, VGS= 10 V
(see Figure 14)
(see Figure 19)
VDD= 475 V, ID= 3.6 A,
RG= 4.7 Ω, VGS= 10 V
(see Figure 14)
(see Figure 19)
Min. Typ. Max. Unit
22 ns
15 ns
51 ns
22 ns
Table 8.
Symbol
Gate-source Zener diode
Parameter
Test conditions
Min. Typ. Max. Unit
BVGSO(1) Gate-source breakdown voltage Igs=±1 mA(open drain) 30
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Table 9. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 7.2 A, VGS=0
ISD= 7.2 A,
di/dt = 100 A/µs,
VDD= 60V, Tj = 25°C
(see Figure 16)
ISD= 7.2 A,
di/dt = 100 A/µs,
VDD= 60V, Tj = 150°C
(see Figure 16)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
7A
28 A
1.6 V
660 ns
5.9 µC
18 A
800 ns
7.4 µC
18.6 A
5/12
5 Page 
STW9NK95Z
5 Revision history
Revision history
Table 10. Document revision history
Date
Revision
Changes
11-Oct-2006
03-Jul-2008
1 Initial release
2 Updated Figure 6, Figure 7, Figure 9
11/12
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