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DX10N60F PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 DX10N60F
기능 N-Channel MOSFET
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DX10N60F 데이터시트, 핀배열, 회로
DX10N60R/DX10N60F
N-Channel MOSFET 600V, 10A, 0.7
General Description
These N-channel MOSFET are produced using advanced
DeXin’s MOSFET Technology, which provides low on- state
resistance,rugged avalanche, high switching performance and
excellent quality.
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Features
VDS = 600V
VDS = 660V @ Tjmax
ID = 10A
@ VGS = 10V
RDS(ON) 0.7@ VGS = 10V
Applications
Power Supply
PFC
High Current, High Speed Switching
D
TO-220
DX F Series
TO-220F
DX Series
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Drain-Source Voltage @ Tjmax
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Junction and Storage Temperature Range
* Id limited by maximum junction temperature
Symbol
VDSS
VDSS @ Tjmax
VGSS
ID
IDM
PD
EAR
dv/dt
EAS
TJ, Tstg
G
S
MDP10N60G MDF10N60G
600
660
±30
10 10*
6.3 6.3*
40 40*
156 48
1.25 0.38
15.6
4.5
520
-55~150
`
Unit
V
V
V
A
A
A
W
W/ oC
mJ
V/ns
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Jun. 2010 Version 1.2
Symbol
RθJA
RθJC
MDP10N60G
62.5
0.8
MDF10N60G
62.5
2.6
Unit
oC/W
1 www.dexinchip.com




DX10N60F pdf, 반도체, 판매, 대치품
10
Note : I = 10A
D
8
6
120V
300V
480V
4
2
0
0 5 10 15 20 25 30
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
35
102
Operation in This Area
is Limited by R DS(on)
101
100
10 µs
100 µs
10 ms@ 1 ms
DC 100 ms
10-1
10-2
10-1
Single Pulse
T =Max rated
J
TC=25
100 101 102
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
DX10N60R(TO-220)
2400
2200
2000
1800
1600
1400
C
oss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
C
oss
=
Cds
+
Cgd
Crss = Cgd
1200
1000
800
600
400
200
0
Crss
Notes ;
1. V = 0 V
GS
2. f = 1 MHz
1 10
VDS , Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
102
Operation in This Area
is Limited by R DS(on)
101
100
10 µs
100 µs
1 ms
10 ms
100 ms
DC 1s
10-1
10-2
10-1
Single Pulse
T =Max rated
J
TC=25
100 101 102
VDS, Drain-Source Voltage [V]
Fig.10 Maximum Safe Operating Area
DX10N60F(TO-220F)
100
D=0.5
0.2
10-1 0.1
0.05
0.02
0.01
10-2
10-5
single pulse
Notes : Duty Factor,
D=t /t PEAK T = P
12
* Z J DM θ JC* Rθ JC(t) + TC
R =0.8/W
Θ JC
10-4 10-3 10-2 10-1 100
t1, Rectangular Pulse Duration [sec]
101
Fig.11 Transient Thermal Response Curve
DX10N60R(TO-220)
Jun. 2010 Version 1.2
4
D=0.5
100
0.2
0.1
0.05
10-1 0.02
10-2
10-5
0.01
single pulse
Notes : Duty Factor,
D=t /t
12
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
RΘ JC=2.6/W
10-4 10-3
10-2 10-1
100
t1, Rectangular Pulse Duration [sec]
101
Fig.12 Transient Thermal Response Curve
DX10N60F(TO-220F)
www.dexinchip.com

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DX10N60F 전자부품, 판매, 대치품
Physical Dimensions
3 Leads, TO-220F
Dimensions are in millimeters unless otherwise specified
S y mbol
A
b
b1
C
D
E
e
F
G
L
L1
Q
Q1
¢R
M in
4 .5 0
0 .6 3
1 .1 5
0 .3 3
1 5 .4 7
9 .6 0
2 .3 4
6 .4 8
1 2 .2 4
2 .7 9
2 .5 2
3 .1 0
3 .0 0
Nom
2 .5 4
Max
4 .9 3
0 .9 1
1 .4 7
0 .6 3
1 6 .1 3
1 0 .7 1
2 .8 4
6 .9 0
1 3 .7 2
3 .6 7
2 .9 6
3 .5 0
3 .5 5
Jun. 2010 Version 1.2
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부품번호상세설명 및 기능제조사
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