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NLHV3157N 데이터시트 PDF




ON Semiconductor에서 제조한 전자 부품 NLHV3157N은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 NLHV3157N 자료 제공

부품번호 NLHV3157N 기능
기능 Negative Voltage SPDT Switch
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NLHV3157N 데이터시트, 핀배열, 회로
NLHV3157N
Negative Voltage SPDT
Switch
The NLHV3157N is an advanced CMOS analog switch fabricated
with silicon gate CMOS technology. The device passes analog and
digital negative voltages that may vary across the full power−supply
range (from VEE to GND).
Features
Operating Voltage Range: VEE = −12 V to −4 V
Switch Signal Voltage Range: VIS = VEE to GND
Positive Control Signal Voltage: VIN = 0 to 3.3 V
Low ON Resistance: RON 5 W @ VEE = −10 V
Latch−up Performance Exceeds 200 mA
Available in: SC88 6−Pin Package
These Devices are Pb−Free, Halogen−Free/BFR-Free and are
RoHS−Compliant
www.onsemi.com
MARKING
DIAGRAM
6
1 SC−88
DF SUFFIX
CASE 419B
N7 M G
G
1
N7 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may vary
depending upon manufacturing location.
Figure 1. Pin Assignment and logic Diagram
FUNCTION TABLE
Select Input
Function
L B0 Connected to A
H B1 Connected to A
ORDERING INFORMATION
Device
Package
Shipping
NLHV3157NDFT2G SC88
3000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
February, 2016 − Rev. 0
1
Publication Order Number:
NLHV3157N/D




NLHV3157N pdf, 반도체, 판매, 대치품
NLHV3157N
AC ELECTRICAL CHARACTERISTICS (Voltages referenced to GND; Typical characteristics are TA at 25°C.)
−555 to 1255C
Symbol
tPHL, tPLH
tPZL, tPZH
Parameter
Propagation Delay,
Bus to Bus (Note 8)
(A to Bn)
Switch Enable Time
Turn−On Time
(A to Bn)
Condition
CL = 100 pF (Figures 2, 3)
CL = 100 pF (Figures 2, 3)
VEE, V
Min Typ Max Unit
−12 to −4
2 ns
−12 220 ns
−10 175
−8 165
−6 165
−4 200
tPLZ, tPHZ
Switch Disable Time
Turn−Off Time
(A to Bn)
CL = 100 pF (Figures 2, 3)
−12
−10
−8
225 ns
155
150
−6 120
−4 145
tB Switch Break Time RL = 50 W, CL = 100 pF,
VIS = −2.5 V (Figure 4)
−12 10
−10 10
50 ns
60
−8 20
75
−6 20
90
−4 50
135
tPOR
Q
Power ON Reset Time
Charge Injection
(Note 7)
Measured from VEE = −4 V
CL = 1 nF, VGEN = 0 V,
RGEN = 0 W (Figure 5)
−12 to −4
−12
−10
20 ms
170 pC
120
−8 95
−6 55
−4 40
OIRR
Off−Isolation (Note 9) RL = 50 W, f = 10 MHz (Figure 6)
−12 to −4
−33 dB
Xtalk
Crosstalk
RL = 50 W, f = 10 MHz (Figure 7)
−12 to −4
−42 dB
BW −3 dB Bandwidth
RL = 50 W (Figure 10)
−12 to −4
200 MHz
7. Guaranteed by Design.
8. This parameter is guaranteed by design but not tested. The bus switch contributes no propagation delay other than the RC delay of the ON
Resistance of the switch and the 50 pF load capacitance, when driven by an ideal voltage source (zero output impedance).
9. Off Isolation = 20 log10 [VA/VBn].
CAPACITANCES (Note 10)
Symbol
Parameter
Test Conditions
CIN Input Capacitance, Select Inputs
VEE = −12 V
CIOB
B−Port OFF Capacitance
VEE = −10 V
CIOA_ON A Port Capacitance when Switch is Enabled
VEE = −10 V
10. TA = +25°C, f = 1 MHz, Capacitance is characterized but not tested in production.
Typical @ 255C
6
45
100
Unit
pF
pF
pF
www.onsemi.com
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NLHV3157N 전자부품, 판매, 대치품
NLHV3157N
BW
+
0.707 @ VA
VBn
,
n + 0 or 1
Figure 10. Bandwidth
Figure 11. Typical Application
www.onsemi.com
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부품번호상세설명 및 기능제조사
NLHV3157N

Negative Voltage SPDT Switch

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