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부품번호 | QID3350001 기능 |
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기능 | Dual IGBT HVIGBT Module | ||
제조업체 | Powerex | ||
로고 | |||
전체 6 페이지수
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
QID3350001 Preliminary
Dual IGBT
HVIGBT Module
500 Amperes/3300 Volts
A
C
Q
DD
F
(4 PLACES)
E
E1 G C2
J HB
T
U
V
C1
E1 E2 (C1)
E2
C2
G1 G2
RL
S (5 PLACES)
M
G
NW
PX
E1 C2
E1 C2
G1
G2
E2
C1 E2
K
(4 PLACES)
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
A 5.11 130.0
B 5.51 140.0
C 4.49 114.0
D 2.24
57.0
E 2.42
61.5
F M8 M8 Metric
G 0.71
18.0
H 4.88 124.0
J 1.57
40.0
K 0.27
7.0 Dia.
L M4 M4 Metric
Dimensions
M
N
P
Q
R
S
T
U
V
W
X
Inches
0.51
1.57
1.71
1.49
0.20
1.10
1.72
1.86
2.39
0.65
1.85
Millimeters
13.0
39.9
43.4
38.0
5.0
28.0
43.8
47.2
60.6
16.5
47.0
Description:
Powerex HVIGBTs feature highly
insulating housings that offer
enhanced protection by means of
greater creepage and strike clear-
ance distance for many demanding
applications like medium voltage
drives and auxiliary traction
applications.
Features:
-55 to 150°C Extended
Temperature Range
100% Dynamic Tested
100% Partial Discharge Tested
Advanced Mitsubishi R-Series
Chip Technology
AlSiC Baseplate
Aluminum Nitride (AlN) Ceramic
Substrate for Low Thermal
Impedance
Complementary Line-up in
Expanding Current Ranges to
Mitsubishi HVIGBT Power
Modules
Rugged SWSOA and RRSOA
Applications:
High Voltage Power Supplies
Medium Voltage Drives
Motor Drives
Traction
11/14 Rev. 7
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID3350001
Dual IGBT HVIGBT Module
500 Amperes/3300 Volts
Preliminary
OUTPUT CHARACTERISTICS
(TYPICAL)
750
Tj = 150°C
VGE = 19V
13
625
15
500 11
375
250
9
125
0
0 123 4 56
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
TRANSFER CHARACTERISTICS
(TYPICAL)
750
VCE = VGE
625 Tj = 25°C
Tj = 150°C
500
375
250
125
0
0 2 4 6 8 10 12
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
750
625
VGE = 15V
Tj = 25°C
Tj = 150°C
500
375
250
125
0
0
750
1 234
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
5
625
500
375
250
125 Tj = 25°C
Tj = 150°C
0
01 234 5
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
4 11/14 Rev. 7
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당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
QID3350001 | Dual IGBT HVIGBT Module | Powerex |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |