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PDF QIS1760002 Data sheet ( Hoja de datos )
| Número de pieza | QIS1760002 | |
| Descripción | Single IGBT Module | |
| Fabricantes | Powerex | |
| Logotipo |  |
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
QIS1760002 Preliminary
Single IGBT Module
600 Amperes/1700 Volts
Note: All electrical characteristics scaled from 300A module CM300DX-34SA.
X (2 TYP.)
A
C
M
DE
S
W (4 TYP.)
H
V
P
TB
U
(2 TYP.)
QL
GN
J
R
Y
J
F
K
E
E
G
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
A 4.33
110.0
B 3.15
80.0
C 3.66±0.008 93.0±0.25
D 2.44±0.008 62.0±0.25
E 1.57
40.0
F 1.42 Max. 36.0 Max.
G 1.14
29.0
H 1.00 Max. 25.5 Max.
J 0.89
22.5
K 0.93
23.5
L 0.83
21.0
M 0.63
16.0
C
Dimensions
N
P
Q
R
S
T
U
V
W
X
Y
Inches
0.69
0.79
0.51
0.43
0.43
0.35
M8 Metric
0.16
0.256 Dia.
M4 Metric
0.24
Millimeters
17.5
20.0
13.0
11.0
11.0
9.0
M8
4.0
6.5 Dia.
M4
6.0
Description:
Powerex IGBT Modules are
designed for use in switching
applications. Each module
consists of one IGBT Transistor
in a single configuration with a
reverse-connected super-fast
recovery free-wheel diode. All
components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ UPS
£ Welding Power Supplies
£ Laser Power Supplies
11/14 Rev. 2
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
1
1 page  
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QIS1760002
Single IGBT Module
600 Amperes/1700 Volts
Preliminary
1200
1000
800
OUTPUT CHARACTERISTICS
(CHIP - TYPICAL)
Tj =
25°C
VGE = 20V
15
11
600 10
400
9
200
8
0
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(CHIP - TYPICAL)
10
Tj = 25°C
8
6 IC = 1200A
IC = 600A
4 IC = 360A
2
0
6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(CHIP - TYPICAL)
4.5
4.0
VGE = 15V
Tj = 25°C
3.5 Tj = 125°C
3.0 Tj = 150°C
2.5
2.0
1.5
1.0
0.5
0
0 200 400 600 800 1000 1200
COLLECTOR CURRENT, IC, (AMPERES)
2x103
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(CHIP - TYPICAL)
2x102
Tj = 25°C
Tj = 125°C
Tj = 150°C
2x101
0
1
2
3 456
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
11/14 Rev. 2
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet QIS1760002.PDF ] | |
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