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Número de pieza | SCT30N120 | |
Descripción | Silicon carbide Power MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
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No Preview Available ! SCT30N120
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mΩ
(typ., TJ = 150 °C) in an HiP247™ package
Datasheet - production data
Features
Very tight variation of on-resistance vs.
temperature
Very high operating temperature capability
(TJ = 200 °C)
Very fast and robust intrinsic body diode
Low capacitance
HiP247
3
2
1
Figure 1: Internal schematic diagram
Applications
Solar inverters, UPS
Motor drives
High voltage DC-DC converters
Switch mode power supply
Description
D(2, TAB)
G(1)
S(3)
AM01475v1_Tab
This silicon carbide Power MOSFET is produced
exploiting the advanced, innovative properties of
wide bandgap materials. This results in
unsurpassed on-resistance per unit area and
very good switching performance almost
independent of temperature. The outstanding
thermal properties of the SiC material, combined
with the device’s housing in the proprietary
HiP247™ package, allows designers to use an
industry standard outline with significantly
improved thermal capability. These features
render the device perfectly suitable for high-
efficiency and high power density applications.
Table 1: Device summary
Order code
Marking
Package
Packaging
SCT30N120
SCT30N120
HiP247™
Tube
The device meets ECOPACK standards, an environmentally-friendly grade of products commonly
referred to as “halogen-free”. See Section 6: "Package information".
June 2016
DocID023109 Rev 10
This is information on a product in full production.
1/13
www.st.com
1 page SCT30N120
Electrical characteristics
Symbol
VSD
trr
Qrr
IRRM
Table 8: Reverse SiC diode characteristics
Parameter
Test conditions
Min
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
IF = 10 A, VGS = 0 V
ISD = 20 A, di/dt = 100 A/µs
VDD = 800 V
-
-
-
-
Typ.
3.5
140
140
2
Max
-
-
-
Unit
V
ns
nC
A
DocID023109 Rev 10
5/13
5 Page SCT30N120
Dim.
A
A1
b
b1
b2
c
D
E
e
L
L1
L2
ØP
ØR
S
Package information
Table 9: HiP247™ package mechanical data
mm.
Min.
Typ.
Max.
4.85 5.15
2.20 2.60
1.0 1.40
2.0 2.40
3.0 3.40
0.40 0.80
19.85
20.15
15.45
15.75
5.30 5.45 5.60
14.20
14.80
3.70 4.30
18.50
3.55 3.65
4.50 5.50
5.30 5.50 5.70
DocID023109 Rev 10
11/13
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet SCT30N120.PDF ] |
Número de pieza | Descripción | Fabricantes |
SCT30N120 | Silicon carbide Power MOSFET | STMicroelectronics |
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