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PDF BAV170 Data sheet ( Hoja de datos )
| Número de pieza | BAV170 | |
| Descripción | Low-leakage Double Diode | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
BAV170
Low-leakage Double Diode
Plastic-Encapsulate Diode
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
FEATURES
z Low leakage current: typ. 3pA
z Switching time: typ. 0.8µs
3
z Continuous reverse voltage:max.75V 1
z Repetitive peak reverse voltage:max.85V 2
z Repetitive peak forward current: max. 500mA.
V
MARKING:JX'
D
A
L
Top View
G
BS
C
H
K
J
Maximum Ratings @TA=25℃
Parameter
Repetitive Peak reverse voltage
DC Blocking Voltage
continuous forward current
single diode loaded; note1;
double diode loaded; note1;
repetitive peak forward current
non-repetitive peak forward current
square wave; Tj=25C prior to surge;
tp=1μs
tp=1ms
tp=1s
thermal resistance from junction to tie-point
Symbol
VRRM
VR
IF
IFRM
Limits
85
75
215
125
500
Unit
V
V
mA
mA
IFSM
4A
1
0.5
Rth j-tp 360 K/W
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
thermal resistance from junction to ambient note1;
Rth j-a
500 K/W
Total Power Dissipation
Junction temperature
Storage temperature range
Note1.Device mounted on a FR4 printed-circuit board.
Ptot
TJ
TSTG
250
150
-65 to+150
mW
℃
℃
Electrical Characteristics @TA=25℃
Parameter
Forward voltage
reverse current
Reverse recovery time
Diodes Capacitance
Symbol
VF1
VF2
VF3
VF4
IR
trr
Cd
Conditions
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=75V
IF=IR=10mA,RL=100Ω
VR=0,f=1MHz
Min. Typ. Max. Unit
0.9 V
1.0 V
1.1 V
1.25 V
5 nA
3 us
2 pF
http://www.SeCoSGmbH.com
27-Sep-2010 Rev. B
Any changing of specification will not be informed individual
Page 1 of 3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet BAV170.PDF ] | |
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