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PDF BAV99W Data sheet ( Hoja de datos )

Número de pieza BAV99W
Descripción Switching Diode Array
Fabricantes Taiwan Semiconductor 
Logotipo Taiwan Semiconductor Logotipo



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No Preview Available ! BAV99W Hoja de datos, Descripción, Manual

CREAT BY ART
Small Signal Product
Features
Fast switching device (Trr<4.0ns)
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Mechanical Data
CaseFlat lead SOT-323 small outline plastic package
TerminalMatte tin plated, solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed:260/S
PolarityIndicated by cathode band
Weight5 mg
Maximum Ratings and Electrical Characteristics
Rating at 25 ambient temperature unless otherwise specified.
Absolute Maximum Ratings (TA=25)
Parameter
Peak Repetitive Reverse Voltage
Reverse Voltage
Continuous Forward Current
Repetitive Peak Forward Current
Peak Forward Surge Current (tp=10ms)
Total Power Dissipation
Thermal Resistance form Junction Ambient
Junction Temperature
Storage Temperature Range
Single Diode Load
Double Diode Load
at t = 1us
at t = 1ms
at t = 1s
Symbol
VRRM
VR
IF
IFRM
IFSM
Ptot
RthjA
TJ
TSTG
Characteristics at TA=25
Parameter
Forward Voltage
at IF = 1 mA
at IF = 10 mA
at IF = 50 mA
at IF = 150 mA
Reverse Current
at VR = 25 V
at VR = 75 V
at VR = 25 V, Tj = 150
at VR = 75 V, Tj = 150
Total Capacitance
at VR = 0 V, f = 1 MHz
Reverse Revovery Time
at IF = IR = 10 mA, Irr = 0.1 x IR, RL = 100
Symbol
VF
IR
Cd
trr
BAV99W
Switching Diode Array
SOT-323
Pin Configuration
Value
85
75
150
130
500
4
1
0.5
200
625
150
- 55 to + 150
Max.
0.715
0.855
1
1.25
30
1
30
50
1.5
4
Units
V
V
mA
mA
A
mW
/W
OC
OC
Units
V
nA
uA
uA
uA
pF
ns
VersionA13

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