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DIM1500ESM33-TS000 데이터시트 PDF




Dynex에서 제조한 전자 부품 DIM1500ESM33-TS000은 전자 산업 및 응용 분야에서
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부품번호 DIM1500ESM33-TS000 기능
기능 Single Switch IGBT Module
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DIM1500ESM33-TS000 데이터시트, 핀배열, 회로
Replaces DS6072-5
DIM1500ESM33-TS000
Single Switch IGBT Module
DS6072-6 September 2014 (LN31982)
FEATURES
10µs Short Circuit Withstand
High Thermal Cycling Capability
Soft Punch Through Silicon
High Current Density Enhanced DMOS SPT
Isolated AlSiC Base With AlN Substrates
KEY PARAMETERS
VCES
VCE(sat) * (typ)
IC (max)
IC(PK) (max)
3300V
2.2V
1500A
3000A
* Measured at the auxiliary terminals
APPLICATIONS
High Reliability Inverters
Motor Controllers
Traction Drives
Choppers
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 1200V to
6500V and currents up to 2400A.
The DIM1500ESM33-TS000 is a single switch 3300V,
n-channel enhancement mode, insulated gate bipolar
transistor (IGBT) module. The IGBT has a wide
reverse bias safe operating area (RBSOA) plus 10μs
short circuit withstand. This device is optimised for
traction drives and other applications requiring high
thermal cycling capability.
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety.
3(C)
2(G)
9(C) 7(C)
5(C)
1(E)
8(E) 6(E) 4(E)
Fig. 1 Circuit configuration
ORDERING INFORMATION
Order As:
DIM1500ESM33-TS000
Note: When ordering, please use the complete part
number
Outline type code: E
(See Fig. 11 for further information)
Fig. 2 Package
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
1/8




DIM1500ESM33-TS000 pdf, 반도체, 판매, 대치품
DIM1500ESM33-TS000
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise
Symbol
td(off)
tf
EOFF
td(on)
tr
EON
Qrr
Irr
Erec
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Tcase = 125°C unless stated otherwise
Symbol
td(off)
tf
EOFF
td(on)
tr
EON
Qrr
Irr
Erec
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Tcase = 150°C unless stated otherwise
Symbol
td(off)
tf
EOFF
td(on)
tr
EON
Qrr
Irr
Erec
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Test Conditions
IC = 1500A
VGE = ±15V
VCE = 1800V
Rg(ON) = 1.65
Rg(OFF) = 1.5
CGE = 330nF
LS ~ 150nH
IF = 1500A
VCE = 1800V
dIF/dt = 4000A/μs
Min Typ. Max Units
2700
ns
520
2900
ns
mJ
1000
400
ns
ns
1900
850
mJ
μC
920 A
1000
mJ
Test Conditions
IC = 1500A
VGE = ±15V
VCE = 1800V
Rg(ON) = 1.65
Rg(OFF) = 1.5
CGE = 330nF
LS ~ 150nH
IF = 1500A
VCE = 1800V
dIF/dt = 4000A/μs
Min Typ. Max Units
2750
ns
570
3250
ns
mJ
1020
420
ns
ns
2500
1400
mJ
μC
1160
A
1700
mJ
Test Conditions
IC = 1500A
VGE = ±15V
VCE = 1800V
Rg(ON) = 1.65
Rg(OFF) = 1.5
CGE = 330nF
LS ~ 150nH
IF = 1500A
VCE = 1800V
dIF/dt = 4000A/μs
Min Typ. Max Units
2800
550
3450
1030
430
2750
1600
ns
ns
mJ
ns
ns
mJ
μC
1200
A
1950
mJ
4/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com

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DIM1500ESM33-TS000 전자부품, 판매, 대치품
DIM1500ESM33-TS000
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services.
All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
6 x M8
190 ±0.5
171 ±0.15
57 ±0.1
screwing depth
max. 16
7
3 x M4
41.25 ±0.2
79.4 ±0.2
61.5 ±0.3
20.25 ±0.2
61.5 ±0.3
13 ±0.2
8 x Ø7
28 ±0.5
screwing depth
max. 8
external connection
5(C)
7(C)
9(C)
3(C)
external connection
7(C)
9(C)
5(C)
3(C)
2(G)
2(G)
Nominal Weight: 1400g
1(E) 1(E)
4(E) 6(E) M8o(Ed) ule Outline T6y(Ep) e Cod8(Ee): E 4(E)
external connection
external connection
Fig. 11 Module outline drawing
DIM....ESM.......
DIM....ECM.......
external connection
5(C) 7(C)
9(C)
4(E) 6(E)
external connection
DFM....EXM.......
8(E)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
7/8

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부품번호상세설명 및 기능제조사
DIM1500ESM33-TS000

Single Switch IGBT Module

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