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DIM500ACM65-TS000 데이터시트 PDF




Dynex에서 제조한 전자 부품 DIM500ACM65-TS000은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 DIM500ACM65-TS000 기능
기능 Single Switch IGBT Module
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DIM500ACM65-TS000 데이터시트, 핀배열, 회로
Preliminary Information
DIM500ACM65-TS000
Single Switch IGBT Module
DS6182-1 January 2016 (LN33268)
FEATURES
10µs Short Circuit Withstand
High Thermal Cycling Capability
Soft Punch Through Silicon
Isolated AlSiC Base with AlN Substrates
Lead Free construction
APPLICATIONS
High Reliability Inverters
Motor Controllers
Traction Drives
Choppers
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 600V to
6500V and currents up to 2400A.
The DIM500ACM65-TS000 is a 6500V, soft punch
through n-channel enhancement mode, insulated gate
bipolar transistor (IGBT) chopper module. The IGBT
has a wide reverse bias safe operating area (RBSOA)
plus 10μs short circuit withstand. This device is
optimised for traction drives and other applications
requiring high thermal cycling capability.
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety.
KEY PARAMETERS
VCES
VCE(sat) * (typ)
IC (max)
IC(PK) (max)
6500V
3.0V
500A
1000A
* Measured at the auxiliary terminals
3(C)
2(G)
9(C) 7(C) 5(A)
1(E)
8(E) 6(E) 4(K)
Fig. 1 Circuit configuration
ORDERING INFORMATION
Order As:
DIM500ACM65-TS000
Note: When ordering, please use the complete part
number
Outline type code: A
(See Fig. 11 for further information)
Fig. 2 Package
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
1/8




DIM500ACM65-TS000 pdf, 반도체, 판매, 대치품
DIM500ACM65-TS000
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise
Symbol
Parameter
td(off)
tf
EOFF
td(on)
tr
EON
Qrr
Irr
Erec
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Tcase = 125°C unless stated otherwise
Symbol
Parameter
td(off)
tf
EOFF
td(on)
tr
EON
Qrr
Irr
Erec
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Test Conditions
IC = 500A
VGE = ±15V
VCE = 3600V
RG(ON) = 4.7
RG(OFF) = 15
Cge = 220nF
LS ~ 280nH
IF = 500A
VCE = 3600V
dIF/dt = 1400A/μs
Min Typ. Max Units
3.6 μs
450 ns
2600
mJ
900 ns
400 ns
3200
800
mJ
μC
600 A
1700
mJ
Test Conditions
IC = 500A
VGE = ±15V
VCE = 3600V
RG(ON) = 4.7
RG(OFF) = 15
Cge = 220nF
LS ~ 280nH
IF = 500A
VCE = 3600V
dIF/dt = 1400A/μs
Min Typ. Max Units
3.6 μs
450 ns
2700
mJ
800 ns
450 ns
4000
1400
mJ
μC
870 A
3000
mJ
4/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com

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DIM500ACM65-TS000 전자부품, 판매, 대치품
DIM500ACM65-TS000
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services.
All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
6 x M8
190 ±0.5
171 ± 0.15
57 ±0.1
screwing depth
max. 16
7
3 x M4
14 ±0.2
61.2±0.3
59.2 ±0.2
61.2± 0.3
12 ±0.2
8 xØ 7
38 ±0.5
screwing depth
max. 8
external connection
external connection
5(C) 7(C) 9(C) Nominal Weight: 7(C1) 700g 9(C)
3(C) 3(C)
5(A)
2(G) Module Outlin2(eG)Type Code: A
Fig. 11 Module outline drawing
1(E)
4(E) 6(E)
8(E)
1(E)
6(E) 8(E)
4(C)
external connection
external connection
DIM...ASM.......
DIM...ACM.......
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
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부품번호상세설명 및 기능제조사
DIM500ACM65-TS000

Single Switch IGBT Module

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