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PDF DAP222M Data sheet ( Hoja de datos )
| Número de pieza | DAP222M | |
| Descripción | Switching Diode | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Data Sheet
Switching Diode
DAP222M
Applications
Ultra high speed switching
Dimensions (Unit : mm)
Features
1) Ultra small mold type. (VMD3)
2) High reliability.
1.2±0.1
0.32±0.05
(3)
0.13±0.05
0～0.1
Construction
Silicon epitaxial planar
0.22±0.05
(1) (2)
0.22±0.05
0.4 0.4
0.5±0.05
ROHM : VMD3
dot (year week factory)
Taping specifications (Unit : mm)
4.0±0.07
2.0±0.04
φ1.55±0.05
Land size figure (Unit : mm)
0.8
0.5
0.4
0.4
VMD3
Structure
0.3±0.1
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Forward voltage (Single)
Average rectified forward current (Single)
VRM
VR
IFM
Io
Surge current (t=1us)
Power dissipation
Isurge
Pd
Junction temperature
Tj
Storage temperature
Tstg
1.3±0.05
0
(4.0±0.1)
Limits
80
80
300
100
4
150
150
55 to 150
2.0±0.05
φ0.5±0.05
Unit
V
V
mA
mA
A
mW
°C
°C
0.6±0.05
0
Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
Reverse current
Capacitance between terminals
VF
IR
Ct
-
-
-
- 1.2
- 0.1
- 3.5
Reverse recovery time
trr - - 4
Unit Conditions
V IF=100mA
μA VR=70V
pF VR=6V , f=1MHz
ns VR=6V , IF=5mA , RL=50Ω
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/2
2011.06 - Rev.B
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet DAP222M.PDF ] | |
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