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Datasheet 1SS344 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1SS344 | SCHOTTKY B ARRIER DIODE 1SS344
SCHOTTKY BARRIER DIODE
FEATURES Low Forward Voltage Fast Reverse Recovery Time High Forward Current APPLICATIONS High Speed Switching
SOT-23
MARKING: H9
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
VR DC Blocking Voltage
IO Forward Continuous Cu |  Jin Yu Semiconductor | diode |
| 2 | 1SS344 | SCHOTTKY BARRIER DIODE JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
1SS344
SCHOTTKY BARRIER DIODE
FEATURES Low Forward Voltage Fast Reverse Recovery Time High Forward Current APPLICATIONS High Speed Switching
MARKING: H9
SOT-23
Solid dot = Green molding compound |  JCET | diode |
| 3 | 1SS344 | Surface Mount Schottky Planar Diode 1SS344
Surface Mount Schottky Planar Diode
SOT-23
Features
Fast reverse recovery time:trr=20ns(typ). Low forward voltage:VF=0.50V (typ). High average forward current:IO=0.5A(max.)
Applications
Ultra high speed switching application.
Ordering Information
Dimensions in inches and (millim |  LGE | diode |
| 4 | 1SS344 | DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) TOSHIBA Diode Silicon Epitaxial Schottky Planar Type
1SS344
Ultra High Speed Switching Application
1SS344
Unit: mm
z Low forward voltage
: VF (3) = 0.50V (typ.)
z Fast reverse recovery time : trr = 20ns (typ.)
z High average forward current : IO = 0.5A (max)
Absolute Maximum Ratings (Ta = 25° |  Toshiba Semiconductor | diode |
1SS Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1SS104 | SILICON PLANAR TYPE DIODE Toshiba Semiconductor diode | | |
| 2 | 1SS106 | SILICON SCHOTTKY BARRIER DIODE 1SS106
SILICON SCHOTTKY BARRIER DIODE
for various detector, high speed switching
Features • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal.
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Reverse Voltage Average Forward Current Junction T  SEMTECH diode | | |
| 3 | 1SS106 | Silicon Schottky Barrier Diode 1SS106
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
REJ03G0125-0200Z (Previous: ADE-208-153A)
Rev.2.00 Oct.23.2003
Features
• Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal..
Ordering Information
Type No. 1S  Renesas diode | | |
| 4 | 1SS106 | SMALL SIGNAL SCHOTTKY DIODES R SEMICONDUCTOR
1SS106
SMALL SIGNAL SCHOTTKY DIODES
FEATURES
Detection effciency is very good Small temperature coefficient High reliability with glass seal For use in RECORDER, TV, RADIO, TELEPHONE as detectors, super high speed switching circuits small current rectifier High temperature solderi  JINAN JINGHENG ELECTRONICS diode | | |
| 5 | 1SS106 | Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching 1SS106
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
ADE-208-153A (Z) Rev. 1 Oct. 1998 Features
• Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal.
Ordering Information
Type No. 1SS106 Cathode White 2nd band Wh  Hitachi Semiconductor diode | | |
| 6 | 1SS108 | Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching 1SS108
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
ADE-208-154A (Z) Rev. 1 Features
• Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal.
Ordering Information
Type No. 1SS108 Cathode White 2nd band Black Mark H Hitachi Semiconductor diode | | |
| 7 | 1SS110 | Silicon Epitaxial Planar Diode for Tuner Band Switch 1SS110
Silicon Epitaxial Planar Diode for Tuner Band Switch
ADE-208-179B (Z) Rev. 2 Features
• Low forward resistance. (r f = 0.9 Ω max) • Suitable for 5mm pitch high speed automatical insertion. • Small glass package (MHD) enables easy mounting and high reliability.
Ordering Information
T Hitachi Semiconductor diode | |
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