Datasheet.kr   

BAS70-06T PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BAS70-06T
기능 SURFACE MOUNT SCHOTTKY BARRIER DIODE
제조업체 Diodes
로고 Diodes 로고 



전체 2 페이지

		

No Preview Available !

BAS70-06T 데이터시트, 핀배열, 회로
BAS70T/ -04T/ -05T/ -06T
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
· Low Turn-on Voltage
· Fast Switching
· PN Junction Guard Ring for Transient and
ESD Protection
· Ultra-Small Surface Mount Package
Mechanical Data
A
C
TOP VIEW B C
· Case: SOT-523, Molded Plastic
· Case material - UL Flammability Rating 94V-0
· Moisture sensitivity: Level 1 per J-STD-020A
· Terminals: Solderable per MIL-STD-202,
Method 208
· Polarity: See Diagrams Below
· Marking: See Diagrams Below & Page 2
· Weight: 0.002 grams (approx.)
· Ordering Information, see Page 2
K
J
B
G
H
E
N
DL
SOT-523
Dim Min Max Typ
A 0.15 0.30 0.22
B 0.75 0.85 0.80
C 1.45 1.75 1.60
D ¾ ¾ 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
J 0.00 0.10 0.05
M
K 0.60 0.80 0.75
L 0.10 0.30 0.22
M 0.10 0.20 0.12
N 0.45 0.65 0.50
a 0° 8° ¾
All Dimensions in mm
BAS70T Marking: 7C
BAS70-04T Marking: 7D
BAS70-05T Marking: 7E
BAS70-06T Marking: 7F
Maximum Ratings and Electrical Characteristics, Single Diode @ TA = 25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ tp < 1.0s
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating Temperature Range
Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IFM
IFSM
Pd
RqJA
Tj
TSTG
Value
70
49
70
100
150
833
-55 to +125
-65 to +150
Unit
V
V
mA
mA
mW
°C/W
°C
°C
Electrical Ratings @ TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage (Note 2)
Leakage Current (Note 2)
Total Capacitance
Reverse Recovery Time
Symbol
V(BR)R
VF
IR
CT
trr
Min
70
¾
¾
Max
410
1000
100
2.0
5.0
Unit Test Condition
— IR = 10mA
mV
tp <300µs, IF = 1.0mA
tp <300µs, IF = 15mA
nA tp < 300µs, VR = 50V
pF VR = 0V, f = 1.0MHz
ns
IF = IR = 10mA to IR = 1.0mA,
Irr = 0.1 x IR, RL = 100W
Notes:
1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
DS30261 Rev. 4 - 2
1 of 2
BAS70T/ -04T/ -05T/ -06T






구       성총 2 페이지
다운로드[ BAS70-06T.PDF 데이터시트 ]
구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

상호 : 아이지 인터내셔날

사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ]



링크공유

링크 :

관련 데이터시트

부품번호상세설명 및 기능제조사
BAS70-06

Silicon Schottky Diode

Infineon
Infineon
BAS70-06

General-purpose Schottky diodes

NXP
NXP

DataSheet.kr    |   2020   |  연락처   |  링크모음   |   검색  |   사이트맵