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BAS70-05W PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BAS70-05W
기능 Surface Mount Schottky Barrier Diodes
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BAS70-05W 데이터시트, 핀배열, 회로
Elektronische Bauelemente
BAS70W/-04W/-05W/-06W
VOLTAGE 70 V, 70 mA
Surface Mount Schottky Barrier Diodes
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
z Low Turn-on voltage
z Low Forward Voltage - 0.75V(Max) @ IF = 10 mA
z Very Low Capacitance - Less Than 2.0pF @ 0V
For high speed switching application, circuit protection
MECHANICAL DATA
z Case: SOT-323, Molded Plastic
z Terminals: Solderable per MIL-STD-202,Method 208
z Polarity: See Diagrams Below
z Weight: 0.004 grams (approx.)
z Mounting Position: Any
SOT-323
A
L
3
Top View
CB
12
KE
1
3
2
D
F GH J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.00 2.20
2.15 2.45
1.15 1.35
0.90 1.10
1.20 1.40
0.20 0.40
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.15
--
0.525 TYP.
BAS70W Marking: K7C, BE
BAS70-04W Marking: K74
BAS70-05W Marking: K75
BAS70-06W Marking: K76
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TJ = 150°C unless otherwise noted)
TYPE NUMBER
Reverse Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
Forward Continuous Current
Single Forward Current
t 10 m
Operating Junction and Storage Temperature Range
SYMBOL
VR
PF
IFM
IFSM
TJ, TSTG
VALUES
70
225
1.8
70
100
-55~150
UNITS
V
mW
mW / °C
mA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETERS
Reverse breakdown voltage
Diode capacitance
Reverse voltage leakage current
Forward voltage
SYMBOL
V(BR)R
CT
IR
VF
TEST CONDITIONS
IR= 10µA
VR=0, f=1MHz
VR=50V
VR=70V
IF=1.0 mA
IF=10 mA
IF=15 mA
MIN
70
-
-
-
MAX
-
2.0
0.1
10
410
750
1000
UNITS
V
pF
μA
mV
http://www.SeCoSGmbH.com/
01-June-2005 Rev. B
Any changes of specification will not be informed individually.
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관련 데이터시트

부품번호상세설명 및 기능제조사
BAS70-05

Silicon Schottky Diode

Infineon
Infineon
BAS70-05

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Diodes Incorporated
Diodes Incorporated

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