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Datasheet P80N55-08 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1P80N55-08STP80N55-08

STB80NF55-08T4 STP80NF55-08, STW80NF55-08 N-channel 55 V, 0.0065 Ω, 80 A, TO-220, D2PAK, TO-247 STripFET™ Power MOSFET Features Type STB80NF55-08T4 STP80NF55-08 STW80NF55-08 VDSS 55 V 55 V 55 V ■ Standard threshold drive RDS(on) max < 0.008 Ω < 0.008 Ω < 0.008 Ω ID 80 A 80 A 80 A
STMicroelectronics
STMicroelectronics
data


P80 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1P8008BDN-Channel Enhancement Mode MOSFET

P8008BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 80V 80mΩ @VGS = 10V ID 15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 80 Gate-Source Voltage VGS ±25 Continuous Drai
UNIKC
UNIKC
mosfet
2P8008BDAN-Channel Enhancement Mode MOSFET

P8008BDA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 80V 68mΩ @VGS = 10V ID 16A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 80 Gate-Source Voltage VGS ±25 Continuous Dra
UNIKC
UNIKC
mosfet
3P8008BVN-Channel Enhancement Mode MOSFET

P8008BV N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 80V 80mΩ @VGS = 10V ID 3A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 80 Gate-Source Voltage VGS ±25 Conti
UNIKC
UNIKC
mosfet
4P8008BVAN-Channel Enhancement Mode MOSFET

P8008BVA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 80V 68mΩ @VGS = 10V ID 3.5A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 80 Gate-Source Voltage VGS ±25 Continuous Dra
UNIKC
UNIKC
mosfet
5P8008HVN-Channel Enhancement Mode MOSFET

P8008HV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 80V 80mΩ @VGS = 10V ID 4A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 80 Gate-Source Voltage VGS ±25 Continuous Drai
UNIKC
UNIKC
mosfet
6P8008HVADual N-Channel Enhancement Mode MOSFET

P8008HVA Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 80V 68mΩ @VGS = 10V ID 3.2A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 80 Gate-Source Voltage VGS ±25 Continuou
UNIKC
UNIKC
mosfet
7P800ASILICON RECTIFIER DIODES

P800A - P800K PRV : 50 - 800 Volts Io : 8.0 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free SILICON RECTIFIER DIODES D6 0.360 (9.1) 0.340 (8.6) 1.00 (25.4) MIN. 0.360 (9.1) 0.340 (8.
SynSemi
SynSemi
rectifier



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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