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PDF ACE4922BEM Data sheet ( Hoja de datos )
| Número de pieza | ACE4922BEM | |
| Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | ACE Technology | |
| Logotipo |  |
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ACE4922BEM
Dual N-Channel Enhancement Mode Field Effect Transistor
Description
The ACE4922B is the Dual N-Channel enhancement mode power field effect transistors are
produced using high cell density, DMOS trench technology. This high density process is especially
tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer
power management and other battery powered circuits where high-side switching, low in-line power
loss, and resistance to transients are needed.
APPLICATIONS
Low On-Resistance
Fast Switching Speed
Low-voltage drive
Easily designed drive circuits
Pb-Free Package is available. The suffix G means Pb-free package
ESD Protected：2000V
Packaging Type
SOT-363
6 54
D1 G2 S2
S1 G1 D2
1 23
Ordering information
ACE4922BEM+ H
Halogen - free
Pb - free
EM : SOT-363
VER 1.1 1
1 page  
Packing Information
SOT-363
ACE4922BEM
Dual N-Channel Enhancement Mode Field Effect Transistor
A
G
N
654
S −B−
123
D 6 PL
K
0.2 (0.008) ○M B○M
J
C
H 0.05
0.0197
INCHES MILLIMETERS
DIM
MIN MAX MIN MAX
A 0.071 0.087 1.80 2.20
B 0.045 0.053 1.15 1.35
C 0.031 0.043 0.80 1.10
D 0.004 0.012 0.10 0.30
G 0.026 BSC
0.65 BSC
H 0.004
0.10
J 0.004 0.010 0.10 0.25
K 0.004 0.012 0.10 0.30
N 0.008 REF
0.20 REF
S 0.079 0.087 2.00 2.20
SOLDERING FOOTRPINT
0.40
0.0157
1.9
0.0748
0.65
0.025
0.65
0.025
SCALE 20:1
mm
inches
VER 1.1 5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet ACE4922BEM.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| ACE4922BEM | Dual N-Channel Enhancement Mode Field Effect Transistor | ACE Technology |
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