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부품번호 | PUMH13 기능 |
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기능 | NPN/NPN resistor-equipped transistors | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 14 페이지수
PEMH13; PUMH13
NPN/NPN resistor-equipped transistors;
R1 = 4.7 k, R2 = 47 k
Rev. 4 — 6 December 2011
Product data sheet
1. Product profile
1.1 General description
NPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted
Device (SMD) plastic packages.
Table 1. Product overview
Type number Package
NXP
JEITA
PEMH13
SOT666 -
PUMH13
SOT363 SC-88
NPN/PNP
complement
PEMD13
PUMD13
PNP/PNP
complement
PEMB13
PUMB13
Package
configuration
ultra small and flat lead
very small
1.2 Features and benefits
100 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
AEC-Q101 qualified
1.3 Applications
Low current peripheral driver
Control of IC inputs
Replaces general-purpose transistors in digital applications
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Per transistor
VCEO
IO
R1
collector-emitter voltage
output current
bias resistor 1 (input)
R2/R1
bias resistor ratio
Conditions
open base
Min Typ Max Unit
- - 50 V
- - 100 mA
3.3 4.7 6.1 k
8 10 12
NXP Semiconductors
PEMH13; PUMH13
NPN/NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k
400
Ptot
(mW)
300
006aac749
200
100
0
-75 -25 25 75 125 175
Tamb (°C)
FR4 PCB, standard footprint
Fig 1. Per device: Power derating curve for SOT363 (SC-88) and SOT666
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter
Per transistor
Rth(j-a)
thermal resistance from
junction to ambient
PEMH13 (SOT666)
PUMH13 (SOT363)
Per device
Rth(j-a)
thermal resistance from
junction to ambient
PEMH13 (SOT666)
PUMH13 (SOT363)
Conditions
in free air
in free air
Min Typ Max Unit
[1][2] - - 625 K/W
[1] - - 625 K/W
[1][2] - - 417 K/W
[1] - - 417 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
PEMH13_PUMH13
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 6 December 2011
© NXP B.V. 2011. All rights reserved.
4 of 14
4페이지 NXP Semiconductors
PEMH13; PUMH13
NPN/NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k
103
hFE
102
10
006aac819
(1)
(2)
(3)
1
VCEsat
(V)
10-1
006aac820
(1)
(2)
(3)
1
10-1
1
10 102
IC (mA)
VCE = 5 V
(1) Tamb = 100 C
(2) Tamb = 25 C
(3) Tamb = 40 C
Fig 4. DC current gain as a function of collector
current; typical values
006aac821
10
VI(on)
(V)
1
(1)
(2)
(3)
10-2
10-1
1
10 102
IC (mA)
IC/IB = 20
(1) Tamb = 100 C
(2) Tamb = 25 C
(3) Tamb = 40 C
Fig 5. Collector-emitter saturation voltage as a
function of collector current; typical values
006aac822
10
VI(off)
(V)
1 (1)
(2)
(3)
10-1
10-1
1
10 102
IC (mA)
VCE = 0.3 V
(1) Tamb = 40 C
(2) Tamb = 25 C
(3) Tamb = 100 C
Fig 6. On-state input voltage as a function of
collector current; typical values
10-1
10-1
1 10
IC (mA)
VCE = 5 V
(1) Tamb = 40 C
(2) Tamb = 25 C
(3) Tamb = 100 C
Fig 7. Off-state input voltage as a function of
collector current; typical values
PEMH13_PUMH13
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 6 December 2011
© NXP B.V. 2011. All rights reserved.
7 of 14
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |