|
|
|
부품번호 | 3N60 기능 |
|
|
기능 | N-Channel Power MOSFET / Transistor | ||
제조업체 | nELL | ||
로고 | |||
전체 9 페이지수
SEMICONDUCTOR
3N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(3A, 600Volts)
DESCRIPTION
The Nell 3N60 is a three-terminal silicon
device with current conduction capability
of 3A, fast switching speed, low on-state
resistance, breakdown voltage rating of 600V,
and max. threshold voltage of 4 volts.
They are designed for use in applications such
as switched mode power supplies, DC to DC
converters, PWM motor controls, bridge circuits
and general purpose switching applications.
FEATURES
RDS(ON) = 3.6Ω@VGS = 10V
Ultra low gate charge(13nC max.)
Low reverse transfer capacitance
(CRSS = 5.5pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D
GDS
TO-251 (I-PAK)
(3N60F)
D
D
G
S
TO-252 (D-PAK)
(3N60G)
GDS
TO-220AB
(3N60A)
GDS
TO-220F
(3N60AF)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
3
600
3.6 @ VGS = 10V
13
D (Drain)
G
(Gate)
S (Source)
www.nellsemi.com
Page 1 of 9
SEMICONDUCTOR
ORDERING INFORMATION SCHEME
Current rating, ID
3 = 3A
MOSFET series
N = N-Channel
Voltage rating, VDS
60 = 600V
Package type
A = TO-220AB
AF = TO-220F
F = TO-251(I-PAK)
G = TO-252(D-PAK)
3N60 Series RRooHHSS
Nell High Power Products
3 N 60 A
■ TEST CIRCUITS AND WAVEFORMS
Fig.1A Peak diode recovery dv/dt test circuit
Fig.1B Peak diode recovery dv/dt waverforms
D.U.T.
+
-
+
VDS
-
L
RG
VGS
Same Type
as D.U.T.
Driver
* dv/dt controlled by RG
* lSD controlled by pulse period
* D.U.T.-Device under test
VDD
VGS
(Driver)
lSD
(D.U.T.)
VDS
(D.U.T.)
P.W.
Period
D= P.W.
Period
VGS=10V
lFM, Body Diode forward current
di/dt
lRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
www.nellsemi.com
Page 4 of 9
4페이지 SEMICONDUCTOR
■ TYPICAL CHARACTERISTICS
Fig.7 Breakdown voltage variation vs.
junction temperature
1.2
1.1
1.0
0.9
Note:
1.VGS=0V
2.ID=250µA
0.8
-100 -50 0 50 100 150 200
Junction temperature, TJ (°C)
Fig.9 Transient thermal response curve
1 D=0.5
0.2
0.1
0.05
0.1
0.02
0.01
Single pulse
0.01
10-5 10-4 10-3
Notes:
1.Rth(j-c)=1.18°C/W Max.
2.Duty factor, D=t1/t2
3.TJM-Tc=PDM×Rth(j-c)(t)
10-2 10-1
100 101
Square wave pulse duration, t1 (SEC)
Fig.11 Safe operating area - 600V
Operation in This Area is Limited by RDS(on)
101
100µs
1ms
100 10ms
DC
10-1
Notes:
1.TJ=25°C
2.TJ=150°C
3.Single pulse
10-2
100
101
102 600103
Drain to Source voltage, VDS (V)
3N60 Series RRooHHSS
Nell High Power Products
Fig.8 On-resistance variation vs.
junction temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100 -50 0 50 100 150 200
Junction temperature, TJ (°C)
Fig.10 Maximum drain current vs.
case temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75 100 125
Case temperature, TC (°C)
150
www.nellsemi.com
Page 7 of 9
7페이지 | |||
구 성 | 총 9 페이지수 | ||
다운로드 | [ 3N60.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
3N60 | N-Channel Power MOSFET / Transistor | nELL |
3N60 | N-Channel MOSFET Transistor | Inchange Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |