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3N80 데이터시트 PDF




nELL에서 제조한 전자 부품 3N80은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 3N80 자료 제공

부품번호 3N80 기능
기능 N-Channel Power MOSFET / Transistor
제조업체 nELL
로고 nELL 로고


3N80 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




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3N80 데이터시트, 핀배열, 회로
SEMICONDUCTOR
3N80 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
DESCRIPTION
(3A, 800Volts)
The Nell 3N80 is a three-terminal silicon
device with current conduction capability of 3A,
fast switching speed, low on-state resistance,
breakdown voltage rating of 800V ,and max.
threshold voltage of 5 volts.
They are designed for use in applications. such
as switched mode power supplies, DC to DC
converters, PWM motor controls, bridge circuits,
and general purpose switching applications .
FEATURES
RDS(ON) = 3.80Ω (typ.) @ VGS = 10V
Ultra low gate charge(35nC max.)
Low reverse transfer capacitance
(CRSS = 23pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D
GDS
TO-220AB
(3N80A)
GDS
TO-220F
(3N80AF)
D (Drain)
G
(Gate)
PRODUCT SUMMARY
ID (A)
3
VDSS (V)
800
RDS(ON) (Ω) (typ.)
3.80 @ VGS = 10V
QG(nC) max.
35
S (Source)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
Drain to Source voltage
TJ=25°C to 150°C
VDGR
Drain to Gate voltage
RGS=20KΩ
VGS Gate to Source voltage
ID Continuous Drain Current
TC=25°C
TC=100°C
IDM Pulsed Drain current(Note 1)
IAR Avalanche current(Note 1)
EAR Repetitive avalanche energy(Note 1)
IAR=3A, RGS=50Ω, VGS=10V
EAS Single pulse avalanche energy(Note 2)
IAS=3A, L=50mH
dv/dt
Peak diode recovery dv/dt(Note 3)
TO-220AB
PD
Total power dissipation (Derate above 25°C)
TC=25°C
TO-220F
TJ Operation junction temperature
TSTG
TL
Storage temperature
Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
Note: 1.Repetitive rating: pulse width limited by junction temperature..
2.IAS = 3A, VDD = 50V, L = 50mH, RGS = 27Ω, starting TJ=25°C.
3.ISD 3A, di/dt ≤ 100A/µs, VDD V(BR)DSS, starting TJ=25°C.
1.6mm from case
VALUE
UNIT
800
800 V
±30
3
1.9
A
12
3
10
mJ
240
2.0 V /ns
100 (0.80)
54 (0.43)
-55 to 150
-55 to 150
300
10 (1.1)
W(W/°C)
ºC
lbf.in (N.m)
www.nellsemi.com
Page 1 of 8




3N80 pdf, 반도체, 판매, 대치품
SEMICONDUCTOR
Fig.5 Capacitance vs. drain-source voltage
1000
800
600
CISS
CISS=CGS+CGD (CDS=shorted)
COSS=CDS+CGD
CRSS=CGD
400
200
0
100
COSS
CRSS
Notes:
1.VGS=0V
2.f=1MHz
101
Drain-Source voltage, VDS (V)
3N80 Series RRooHHSS
Nell High Power Products
Fig.6 Gate charge vs. gate-source voltage
10 VDS = 160V
VDS = 400V
VDS = 640V
5
*Note:ID=3.0A
0
0 5 10 15 20 25 30
Total gate charge, QG (nC)
Fig.7 Breakdown voltage variation
vs. temperature
1.2
1.1
1
0.9 *Notes:
1.VGS=0V
2.ID=250µA
0.8
-75 -50 -25 0 25 50 75 100 125 150 175
Junction temperature, TJ (°C)
Fig.9-1 Maximum safe operating area
for 3N80A
102
Operation in This Area is Limited by RDS(on)
101 10µs
100µs
1ms
100 10ms
DC
10-1 *Notes:
1.TC=25°C
2.TJ=150°C
10-2
3.Single pulse
101 102
103
Drain-source voltage, VDS (V)
Fig.8 On-resistance vs. temperature
3
2.5
2
1.5
1
*Notes:
0.5 1.VGS=10V
2.ID=1.5A
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
Junction temperature, TJ (°C)
Fig.9-2 Maximum safe operating area
for 3N80AF
Operation in This Area is Limited by RDS(on)
101
100µs
1ms
100 10ms
DC
10-1 *Notes:
1.TC=25°C
2.TJ=150°C
3.Single pulse
10-2
100 101 102 103
Drain-source voltage, VDS (V)
www.nellsemi.com
Page 4 of 8

4페이지










3N80 전자부품, 판매, 대치품
SEMICONDUCTOR
3N80 Series RRooHHSS
Nell High Power Products
Fig.4A Unclamped lnductive switching test circuit
VDS
L
10V
RG
tp
D.U.T.
VDD
Fig.4B Unclamped lnductive switching
waveforms
EAS =
1
2
L lAS2
VBR(DSS)
VBR(DSS) - VDD
RBR(DSS)
lAS
VDD
lD(t)
VDS(t)
Time
tp
Case Style
TO-220AB
10.54 (0.415) MAX.
9.40 (0.370)
9.14 (0.360)
3.91 (0.154)
3.74 (0.148)
2.87 (0.113)
2.62 (0.103)
4.06 (0.160)
3.56 (0.140)
PIN
123
16.13 (0.635)
15.87 (0.625)
3.68 (0.145)
3.43 (0.135)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
1.45 (0.057)
1.14 (0.045)
2.67 (0.105)
2.41 (0.095)
2.65 (0.104)
2.45 (0.096)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
14.22 (0.560)
13.46 (0.530)
0.56 (0.022)
0.36 (0.014)
4.70 (0.185)
4.44 (0.1754)
1.39 (0.055)
1.14 (0.045)
15.32 (0.603)
14.55 (0.573)
2.79 (0.110)
2.54 (0.100)
www.nellsemi.com
Page 7 of 8

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N-Channel Power MOSFET / Transistor

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