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부품번호 | NP16N06QLK 기능 |
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기능 | Dual N-channel Power MOS FET | ||
제조업체 | Renesas | ||
로고 | |||
전체 9 페이지수
Data Sheet
NP16N06QLK
60 V – 16 A – Dual N-channel Power MOS FET
Application: Automotive
R07DS1290EJ0101
Rev.1.01
Oct 27, 2015
Description
NP16N06QLK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Super low on-state resistance
⎯ RDS(on)1 = 39 mΩ MAX. (VGS = 10 V, ID = 8 A)
⎯ RDS(on)2 = 60 mΩ MAX. (VGS = 4.5 V, ID = 4 A)
• Low Ciss: Ciss = 500 pF TYP. (VDS = 25 V)
• Designed for automotive application and AEC-Q101 qualified
• Small size package 8-pin HSON dual
Outline
Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred.
Ordering Information
Part No.
NP16N06QLK-E1-AY *1
NP16N06QLK-E2-AY *1
Lead Plating
Pure Sn (Tin)
Packing
Tape 2500 p/reel
Taping (E1 type)
Taping (E2 type)
Note: *1. Pb-free (This product does not contain Pb in the external electrode)
Package
8-pin HSON dual
R07DS1290EJ0101 Rev.1.01
Oct 27, 2015
Page 1 of 7
NP16N06QLK
Typical Characteristics (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
120
100
80
60
40
20
0
0 50 100 150 200
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
ID(pulse)=32A
10 ID(DC)=16A
30
25
20
15
10
5
0
0
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
50 100 150 200
TC - Case Temperature - °C
1
Power Dissipation Limited
0.1
TC=25℃
Single Pulse
0.01
0.1
1
10
VDS - Drain to Source Voltage – V
100
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth(ch-A) = 150°C/W
10 Rth(ch-C) = 5.95°C/W
1
0.1
100 μ
One channel operation
Single pulse
Mounted on a glass expoxy substrate of 40mm x 40mm 1.6 mmt with 4% Copper Area(35μm)
1m
10 m
100 m
1
10 100 1000
PW - Pulse Width - s
R07DS1290EJ0101 Rev.1.01
Oct 27, 2015
Page 4 of 7
4페이지 NP16N06QLK
Package Drawings (Unit: mm)
8-pin HSON Dual (Mass: 0.12 g TYP.)
Renesas package code: PLSN0008DA-A
A
S
1: Source 1
2: Gate 1
7, 8: Drain 1
3: Source 2
4: Gate 2
5, 6: Drain 2
R07DS1290EJ0101 Rev.1.01
Oct 27, 2015
Page 7 of 7
7페이지 | |||
구 성 | 총 9 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
NP16N06QLK | Dual N-channel Power MOS FET | Renesas |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |