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부품번호 | ALT6526 기능 |
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기능 | Multi-Band LTE/CDMA/WCDMA/HSPA Power Amplifier | ||
제조업체 | ANADIGICS | ||
로고 | |||
전체 17 페이지수
FEATURES
• LTE, WCDMA/HSPA & CDMA/EVDO
Applications
• High Output Power
• ≥ +27.3 dBm in LTE
• ≥ +28.6 dBm in WCDMA (R99)
• ≥ +27.5 dBm in CDMA (RC1)
• High Efficiency
• 40% in high power mode (WCDMA mode)
• Low profile 5 mm x 7 mm x 0.9 mm package
• 2 input ports, 5 output ports, all matched to
50 Ω impedance
• Integrated voltage regulator
• Built-in Directional Coupler
• Internal DC block on IN/OUT RF ports
• Low leakage in shutdown mode
• ESD Protection on all pins
• RoHS-compliant package, MSL-3, 260°C
ALT6526
Multi-Band LTE/CDMA/WCDMA/HSPA
Power Amplifier
DATA SHEET - Rev 2.5
ALT6526
22 Pin 5 mm x 7 mm x 0.9 mm
Surface Mount Module
APPLICATIONS
• LTE, WCDMA/HSPA handsets and data
devices operating in UMTS Bands 1, 2, 3, 4, 5,
8, 9,10, 18, 19, 20, 25, and 26
• CDMA/EV-DO handsets and data devices
operating in Band Class 0, 1, 4, 6, 8, 10, 14G
and 15
PRODUCT DESCRIPTION
The ALT6526 Power Amplifier module is designed for
3G/4G handsets, smartphones, modems and modules
operating in LTE, WCDMA/HSPA and CDMA/EVDO
modes. The module includes separate InGaP HBT
amplifier chains - one to support 850/900 bands, the
other for 1700/1900/2100MHz bands. An innovative
design allows the module to switch output among
as many as 5 different frequency bands. Both the
input and output RF ports are internally matched to
50 Ω. The ALT6526 offers improved efficiency and
low quiescent current, and includes integrated daisy
chained couplers to simplify board design and layout.
Figure 1: Block Diagram
07/2013
ALT6526
PARAMETER
Table 4: RF Operating Ranges
MIN TYP MAX UNIT COMMENTS
Operating Frequency (f)
816
814
880
1710
1850
1920
- 849
UMTS Band 5, 19, BC 0, BC 10
- 862
UMTS Band 18, 20, 26
-
-
915
1785
MHz
UMTS Band 8
UMTS Band 3, 4, 9, 10, BC 4, 8, 15
- 1915
UMTS Band 2 & 25, BC 1 & 14G
- 1980
UMTS Band 1, BC 6
Output Power (UMTS)
R99, HPM
HSPA (MPR = 0), HPM (2)
LTE (MPR = 0), HPM (3)
R99, HPM
HSPA (MPR = 0), LPM (2)
LTE (MPR = 0), LPM (3)
LTE (MPR = 0), HPM (3)
LTE (MPR = 0), LPM (3)
R99, HPM
HSPA (MPR = 0), HPM (2)
LTE (MPR = 0), HPM (3)
R99, LPM
HSPA (MPR = 0), LPM (2)
LTE (MPR = 0), LPM (3)
R99, HPM
HSPA (MPR = 0), HPM (2)
LTE (MPR = 0), HPM
R99, LPM
HSPA (MPR = 0), LPM (2)
LTE (MPR = 0), LPM
+28.0 (1) +28.6
-
UMTS Band 1, 3, 4, 5, 9, 10, 19
+26.9 (1) +27.5
-
UMTS Band 1, 3, 4, 5, 9, 10, 19
+26.8 (1) +27.4
-
UMTS Band 1, 3, 4, 5, 9, 10, 19
+10.0 (1) +10.6
-
UMTS Band 1, 3, 4, 5, 9, 10, 19
+9.0 (1) +9.6
-
UMTS Band 1, 3, 4, 5, 9, 10, 19
+9.0 (1) +9.6
-
UMTS Band 1, 3, 4, 5, 9, 10, 19
+26.7 +27.3
-
UMTS Band 18, 20, 26
+9.0 +9.6
-
UMTS Band 18, 20, 26
+28.4 (1) +29.0
-
UMTS Band 2, 25
+27.3 (1) +27.9 - dBm UMTS Band 2, 25
+27.1 (1) +27.7
-
UMTS Band 2, 25
+10.0 (1) +10.6
-
UMTS Band 2, 25
+9.0 (1) +9.6
-
UMTS Band 2, 25
+9.0 (1) +9.6
-
UMTS Band 2, 25
+28.1 (1) +28.7
-
UMTS Band 8
+27.0 (1) +27.6
-
UMTS Band 8
+26.9 (1) +27.5
-
UMTS Band 8
+10.0 (1) +10.6
-
UMTS Band 8
+9.0 (1) +9.6
-
UMTS Band 8
+9.0 (1) +9.6
-
UMTS Band 8
CDMA Output Power
CDMA2000 (RC1), HPM
CDMA2000 (RC1), LPM
CDMA2000 (RC1), HPM
CDMA2000 (RC1), LPM
CDMA2000 (RC1), HPM
CDMA2000 (RC1), LPM
+27.1 (1) +27.7
-
Band Class 4, 6, 8, 15
+9.0 (1) +9.6
-
+26.9 (1) +27.5
+9.0 (1) +9.6
-
-
dBm Band Class 0, 10
+27.5 (1) +28.1
-
Band Class 1, 14G
+9.0 (1) +9.6
-
Case Temperature (TC)
-40 - +105 C
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
over the conditions defined in the electrical specifications.
Notes:
(1) For operations at 3.2 V or 105 8C, POUT is derated by 0.6 dB.
(2) 3GPP TS 34.121-1, Rec .8 Table C 11.1.3 subtest 1.
(3) LTE waveform characteristics: up to 20 MHz BW, QPSK, RB = 18.
4 DATA SHEET - Rev 2.5
07/2013
4페이지 ALT6526
Table 5a: Electrical Specifications - Band 2/25 (1900 MHz) LTE Operation (RB = 12, START = 0, QPSK)
(+25 8C, VBATT = VCC = +3.3 V, VEN_HI = VBAND1 = +1.8 V, VBAND0 = 0 V, VEN_LO = 0 V)
PARAMETER
COMMENTS
MIN TYP MAX UNIT
POUT
VCC
VMODE
Gain
25.5 28.5 32
- 20 -
10 13.5 16.5
dB
+27.7 dBm
+3 dBm
+9.6 dBm
3.3 V
0.7 V
3.3 V
0V
0V
+1.8 V
E-UTRA at ± 10 MHz offset
- -38 -34
+27.7 dBm 3.3 V
0V
- -42 - dBc +3 dBm 0.7 V
0V
- -40 -34
+9.6 dBm
3.3 V
+1.8 V
ACLR1 at ± 7.5 MHz offset (1)
- -39 -36
+27.7 dBm 3.3 V
0V
- -43 - dBc +3 dBm 0.7 V
0V
- -41 -36
+9.6 dBm
3.3 V
+1.8 V
ACLR2 at ± 12 MHz offset
- -60 -40
+27.7 dBm 3.3 V
0V
- -60 - dBc +3 dBm 0.7 V
0V
- -60 -40
+9.6 dBm
3.3 V
+1.8 V
Efficiency (1)
30.5 36
- 3.5
-
-
%
+27.7 dBm
+9.6 dBm
3.3 V
3.3 V
0V
+1.8 V
Quiescent Current
-
40 -
mA
through VCC1 + VCC pins,
VMODE = 1.8 V
Noise in Receive Band
GPS Noise
ISM Noise
- -135 - dBm/Hz 1930 - 1990 MHz
-
-137
- dBm/Hz POUT ≤ 27.7 dBm
-
-149
- dBm/Hz POUT ≤ 27.7 dBm
Out of Band Gain
Rx Band
GPS Band
ISM Band
- G - 0.5 -
- G - 0.8 -
- G-8 -
dB G = In-band Gain
Harmonics
2fO
3fO, 4fO
-
-
-40 -35
-46 -35
dBc
Input Impedance
- - 2:1 VSWR
Suprious Output Level
(all spurious outputs)
- - -70 dBc See note 2
Load mismatch stress with
no permanent degradation or 8:1 -
failure
- VSWR Applies over full operating range
Coupling factor
- 29 - dB
7 DATA SHEET - Rev 2.5
07/2013
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
ALT6526 | Multi-Band LTE/CDMA/WCDMA/HSPA Power Amplifier | ANADIGICS |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |